Inspection apparatus

ABSTRACT

An inspection apparatus includes: beam generation means for generating any of charged particles and electromagnetic waves as a beam; a primary optical system that guides the beam into an inspection object held in a working chamber and irradiates the inspection object with the beam; a secondary optical system that detects secondary charged particles occurring from the inspection object; and an image processing system that forms an image on the basis of the detected secondary charged particles. The primary optical system includes a photoelectron generator having a photoelectronic surface. The base material of the photoelectronic surface is made of material having a higher thermal conductivity than the thermal conductivity of quartz.

This application is a divisional of U.S. patent application Ser. No.14/026,385 filed Sep. 13, 2013, which is incorporated herein byreference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an inspection apparatus that inspectsdefects of a pattern formed on a surface of an inspection object, andspecifically, to an inspection apparatus that captures secondary chargedparticles varying properties of a surface of an inspection object, formsimage data, and inspects a pattern and the like formed on the surface ofthe inspection object on the basis of the image data at a highthroughput, and an inspection method.

2. Description of the Related Art

A conventional semiconductor inspection apparatus supports a 100 nmdesign rule and technologies. Samples as inspection objects are wafers,exposure masks, EUV masks, NIL (nanoimprint lithography) masks, andsubstrates; the samples have thus been varying. At present, apparatusesand technologies that support a design rule for samples with 5 to 30 nmare required. That is, it is required to support L/S (line/space) or hp(half pitch) nodes of 5 to 30 nm in a pattern. In the case where aninspection apparatus inspects such samples, it is required to achieve ahigh resolution.

Here, “samples” are exposure masks, EUV masks, nanoimprint mask (andtemplates), semiconductor wafers, substrates for optical elements,substrates for optical circuits and the like. The samples includesamples with patterns and samples without patterns. The samples withpatterns include samples with asperities and samples without asperities.Patterns are formed of different materials on the samples withoutasperities. The samples without patterns include samples coated with anoxide film and samples with no oxide film.

Problems of the conventional inspection apparatuses are summarized asfollows.

A first problem is insufficient resolution and throughput. In aconventional art of a mapping optical system, the pixel size is about 50nm, and the aberration is about 200 nm. Achievement of further highresolution and improvement of the throughput require reduction inaberration, reduction in energy width of irradiation current, a smallpixel size, and increase in current intensity.

A second problem is that, in the case of SEM inspection, the finer thestructure to be inspected, the more serious the throughput problem is.This problem occurs because the resolution of an image is insufficientif a smaller pixel size is not used. These points are caused because theSEM forms an image and inspects defects on the basis of edge contrast.For instance, in the case of a pixel size of 5 nm and 200 MPPS, thethroughput is approximately 6 hr/cm². This example takes a time 20 to 50times as long as the time of mapping projection. The time is unrealisticfor inspection.

Patent Document 1: International Publication No. WO2002/001596

Patent Document 2: Japanese Patent Laid-Open No. 2007-48686

Patent Document 3: Japanese Patent Laid-Open No. H11-132975

SUMMARY OF THE INVENTION

The conventional inspection apparatuses adopt quartz and syntheticquartz as base materials for the photoelectronic surfaces ofphotoelectron generators. Quartz and synthetic quartz have a low thermalconductivity. Accordingly, heat at a portion subjected to electronicirradiation cannot be quickly dispersed. There is thus a problem inthat, if the power density of laser with which the photoelectronicsurface is irradiated is increased to improve the resolution of theinspection apparatus and improve the throughput, the photoelectronicsurface is damaged by electronic irradiation, quantum efficiency isreduced, and inconsistencies occur in quantum efficiency with respect topositions.

The present invention has been made in view of the problems. It is anobject of the present invention to provide an inspection apparatus thatcan reduce damage to photoelectronic surface caused by electronicirradiation.

There is another problem in that, when the conventional inspectionapparatus inspects a sample having what is referred to as a “mesastructure”, the electric field is nonuniform at ends of the mesastructure (in proximity to a step) and it is thus difficult to acquirean image having high contrast and a high S/N ratio.

The present invention has been made in view of the problem. It is anobject to provide an inspection apparatus that can acquire an imagehaving high contrast and a high S/N ratio at the ends of the mesastructure.

An inspection apparatus of the present invention includes: beamgeneration means for generating any of charged particles andelectromagnetic waves as a beam; a primary optical system that guidesthe beam into an inspection object held in a working chamber andirradiates the inspection object with the beam; a secondary opticalsystem that detects secondary charged particles occurring from theinspection object; and an image processing system that forms an image onthe basis of the detected secondary charged particles, wherein theprimary optical system includes a photoelectron generator having aphotoelectronic surface, and a base material of the photoelectronicsurface is made of material with a higher thermal conductivity than athermal conductivity of quartz.

In the inspection apparatus of the present invention, the base materialof the photoelectronic surface may be made of sapphire or diamond. Thephotoelectronic surface may have a circular shape having a diameter of10 to 200 μm or a rectangular shape having a side of 10 to 200 μm.

In the inspection apparatus of the present invention, photoelectronicmaterial may be coated on the photoelectronic surface, and thephotoelectronic material may be ruthenium or gold. The photoelectronicmaterial may have a thickness of 5 to 100 nm.

The present invention can provide the inspection apparatus that canreduce damage to the photoelectronic surface caused by electronicirradiation.

An inspection apparatus of the present invention includes: beamgeneration means for generating any of charged particles andelectromagnetic waves as a beam; a primary optical system that guidesthe beam into an inspection object held in a working chamber andirradiates the inspection object with the beam; a secondary opticalsystem that detects secondary charged particles occurring from theinspection object; and an image processing system that forms an image onthe basis of the detected secondary charged particles, wherein a centralportion of the inspection object is provided with a central flatportion, a periphery of the central flat portion is provided with aperipheral flat portion via a step, and an electric field correctionplate is arranged around the step, and a surface voltage equivalent to asurface voltage applied to the inspection object is applied to anelectrode on a surface of the electric field correction plate.

In the inspection apparatus of the present invention, the electric fieldcorrection plate comprises an insulation layer provided below theelectrode, and an electrode that is for an electrostatic chuck and isprovided below the insulating layer, and the electric field correctionplate may be in close contact with the inspection object by applying avoltage to the electrode for the electrostatic chuck.

An inspection apparatus of the present invention includes: beamgeneration means for generating any of charged particles andelectromagnetic waves as a beam; a primary optical system that guidesthe beam into an inspection object held in a working chamber andirradiates the inspection object with the beam; control means forcontrolling an incident angle of the beam with which the inspectionobject is irradiated; a secondary optical system that detects secondarycharged particles occurring from the inspection object; and an imageprocessing system that forms an image on the basis of the detectedsecondary charged particles, wherein a central portion of the inspectionobject is provided with a central flat portion, a periphery of thecentral flat portion is provided with a peripheral flat portion via astep, relationship between a detection position of the secondary chargedparticles in proximity to the step and the incident angle of the beam isstored as mapping data in a storage, and when proximity to the step isinspected, the control means controls the incident angle of the beam soas to correct deviation of the detection position of the secondarycharged particles on the basis of the mapping data.

In the inspection apparatus of the present invention, wherein thecontrol means is a movable numerical aperture, and a movement mechanismfor the numerical aperture, the mapping data is data that maps arelationship between a plurality of mirror electron positions inproximity to the step and a position of the numerical aperture, and whenproximity to the step is inspected, the numerical aperture is moved bythe movement mechanism on the basis of the mapping data, and theincident angle of the beam may be controlled to correct a deviation ofthe mirror electron position.

The present invention can provide an inspection apparatus capable ofacquiring an image having high contrast and a high S/N ratio at ends ofa mesa structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an elevational view showing main configuration components inan inspection apparatus according to an embodiment of the presentinvention taken along line A-A of FIG. 2;

FIG. 2A is a plan view of the main configuration components of theinspection apparatus shown in FIG. 1 taken along line B-B of FIG. 1;

FIG. 2B is a schematic sectional view showing another embodiment of asubstrate installation device of the inspection apparatus of theembodiment of the present invention;

FIG. 3 is a sectional view showing a mini-environment device of FIG. 1taken along line C-C;

FIG. 4 is a diagram showing a loader housing of FIG. 1 taken along lineD-D of FIG. 2;

FIGS. 5A and 5B are enlarged views of a wafer rack. FIG. 5A is a sideview. FIG. 5B is a sectional view taken along line E-E of FIG. 5A;

FIG. 6 is a diagram showing a variation of a method of supporting a mainhousing;

FIG. 7 is a variation of the method of supporting a main housing;

FIG. 8 is a schematic diagram showing an overview of a configuration ofa light irradiation electronic optical device;

FIG. 9 is a diagram showing the entire configuration of the inspectionapparatus according to an embodiment of the present invention;

FIGS. 10A and 10B are diagrams showing an example of an inspectionapparatus including an electron gun according to this embodiment of thepresent invention;

FIGS. 11A and 11B are diagrams showing the intensity (amount) ofirradiation current of an electron beam with which a surface of a sampleis to be irradiated, and a state of energy and a state of the beam withwhich the surface of the sample is irradiated, according to anembodiment of the present invention;

FIG. 12 is a diagram showing an example of a primary optical systemusing UV, EUV or X-rays, according to an embodiment of the presentinvention;

FIG. 13 is a schematic diagram of crossover formation of the primaryoptical system according to an embodiment of the present invention;

FIG. 14 is a diagram showing a second embodiment of the primary opticalsystem according to an embodiment of the present invention;

FIG. 15 is a diagram showing an example where light or laser guided to aphotoelectronic surface from a position in a primary system by a mirrorprovided in a column, according to an embodiment of the presentinvention;

FIG. 16 is a diagram showing an example where light or laser guided to aphotoelectronic surface from a position in a primary system by a mirrorprovided in a column;

FIG. 17 is a diagram showing an example of adopting an exemplaryphotoelectric surface coated with a masking material of a pattern in asecond embodiment of an primary optical system, according to anembodiment of the present invention;

FIG. 18 is a diagram showing a method of irradiating the photoelectronicsurface again by reflecting light or laser having passed, according toan embodiment of the present invention;

FIG. 19 is a diagram schematically showing a double pipe structure of asemiconductor inspection apparatus according to an embodiment of thepresent invention;

FIG. 20 is a diagram showing the entire configuration of a semiconductorinspection apparatus according to an embodiment of the presentinvention;

FIG. 21 is a diagram showing a relationship between landing energy LEand gradation DN when a sample is irradiated with an electron beam,according to an embodiment of the present invention;

FIG. 22 is a diagram showing a phenomenon in transition region,according to an embodiment of the present invention;

FIG. 23 is a diagram showing an inspection example of a beam shape at aCO position with respect to LE, according to an embodiment of thepresent invention;

FIGS. 24A and 24B are diagrams showing a principle of a second detectoraccording to an embodiment of the present invention;

FIG. 25 is an electron beam inspection apparatus to which the presentinvention is applied, according to an embodiment of the presentinvention;

FIG. 26 is a diagram showing a detector that can switch EB-TDI andEB-CCD, according to an embodiment of the present invention;

FIG. 27 is a diagram showing an electron beam inspection apparatus towhich the present invention is applied, according to an embodiment ofthe present invention;

FIG. 28 is a diagram showing an example of a configuration where anelectron column of a mapping optical system inspection apparatus and anSEM inspection apparatus are provided in the same main chamber,according to an embodiment of the present invention;

FIG. 29 is a diagram showing an example of an exemplary configurationthat integrates a mode of irradiating a sample with light or laser and amode of irradiating the sample with an electron beam in a primarysystem, according to an embodiment of the present invention;

FIG. 30 is a diagram showing an example of an exemplary configurationthat integrates a mode of irradiating a sample with light or laser and amode of irradiating the sample with an electron beam in a primarysystem, according to an embodiment of the present invention;

FIG. 31 is a diagram showing an example of an exemplary configurationthat integrates a mode of irradiating a sample with light or laser and amode of irradiating the sample with an electron beam in a primarysystem, according to an embodiment of the present invention;

FIGS. 32A and 32B are diagrams showing uniform and stable supply ofsample surface potential, according to an embodiment of the presentinvention;

FIG. 33A is a diagram showing an example of uniform and stable supply ofsample surface potential, according to an embodiment of the presentinvention;

FIG. 33B is a diagram showing an example of uniform and stable supply ofsample surface potential, according to an embodiment of the presentinvention;

FIGS. 34A and 34B are diagrams showing an incident angle of a primarybeam onto a sample in an inspection method according to an embodiment ofthe present invention;

FIG. 35 is a diagram showing an example of beam observation at a COposition, according to an embodiment of the present invention;

FIG. 36 is a diagram showing a mirror electron position at an incidentangle of a primary electron beam, according to an embodiment of thepresent invention;

FIG. 37 is a diagram showing an example of a mirror electron positionand an NA position, according to an embodiment of the present invention;

FIG. 38 is a diagram showing an example of a mirror electron positionand an NA position, according to an embodiment of the present invention;

FIG. 39 is a diagram showing situations where an end of a mesa structure(portion in proximity to a step) is inspected; and

FIG. 40 is a diagram showing a configuration of an electric fieldcorrection plate, according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to the drawings, embodiments of the present invention willhereinafter be described on a semiconductor inspection apparatus thatinspects a substrate, or a wafer, on which a pattern is formed, as aninspection object. Note that the following embodiments are examples ofan inspection apparatus and an inspection method of the presentinvention. This invention is not limited to the examples.

FIGS. 1 and 2A respectively show an elevational view and a plan view ofmain configuration components of a semiconductor inspection apparatus 1of this embodiment.

The semiconductor inspection apparatus 1 of this embodiment includes: acassette holder 10 that holds a cassette storing multiple wafers; amini-environment device 20; a main housing 30 that defines a workingchamber; a loader housing 40 that is disposed between themini-environment device 20 and the main housing 30 to define two loadingchambers; a loader 60 that loads a wafer from the cassette holder 10onto a stage device 50 disposed in the main housing 30; an electronicoptical device 70 attached to a vacuum housing; an optical microscope3000; and a scanning electron microscope (SEM) 3002. These componentsare disposed in a positional relationship as shown in FIGS. 1 and 2A.The semiconductor inspection apparatus 1 further includes: a prechargeunit 81 disposed in the vacuum main housing 30; a potential applicationmechanism 83 (shown in FIG. 14) that applies a potential to a wafer; anelectron beam calibration mechanism 85; and an optical microscope 871that configures an alignment controller 87 for positioning the wafer onthe stage device. The electronic optical device 70 includes a lens tube71 and a light source tube 7000. The internal configuration of theelectronic optical device 70 will be described later.

Cassette Holder

The cassette holder 10 holds a plurality of (two in this embodiment)cassettes c (e.g., closed cassettes, such as SMIF and FOUP, made byAsyst technologies Inc.) each of which stores a plurality of (e.g., 25)wafers in a state of being arranged in the vertical direction inhorizontal orientation. In the case of conveying the cassette by a robotor the like and automatically loading the cassette to the cassetteholder 10, a cassette holder suitable to this loading manner is adopted.In the case of manual loading, a cassette holder that has an opencassette structure suitable to this loading manner is adopted. Any ofthe holders can be selected and installed. In this embodiment, thecassette holder 10 is in conformity with a system of automaticallyloading the cassette c, and includes, for instance, a lifting table 11,and a lifting mechanism 12 that vertically lifts and lowers the liftingtable 11. The cassette c can be automatically set onto the lifting tablein a state indicated by a chain line in FIG. 2A. After the setting, thecassette is automatically turned to a state indicated by a solid line inFIG. 2A to be aligned with the turning axis of a first conveyance unitin the mini-environment device. The lifting table 11 is lowered to astate indicated by a chain line in FIG. 1. Thus, the cassette holderused in the case of automatic loading or the cassette holder used in thecase of manual loading may be appropriately selected among cassetteshaving publicly known structures. Accordingly, detailed description onthe structure and functions of the cassette holder is omitted.

In another embodiment, as shown in FIG. 2B, a plurality of 300 mmsubstrates are stored in groove pockets (not shown) fixed in a box mainbody 501 in a state of being accommodated, and then conveyed or stored.The substrate conveyance box 24 includes: a box main body 501 having ashape of a rectangular cylinder; a substrate conveyance door 502 that isconnected to the box main body 501 and a device of automatically openingand closing the substrate conveyance door and can mechanically open andclose an opening on a side of the box main body 501; a cover 503 that isdisposed opposite to the opening and covers the opening through whichfilters and a fan motor is attached and detached; groove pockets (notshown) for storing substrates W; an ULPA filter 505; a chemical filter506; and a fan motor 507. In this embodiment, the substrate is carriedin and out by a robotic first conveyance unit 612 of the loader 60.

The substrates, or wafers, stored in the cassette c are to be inspected.The inspection is performed after or in a process on a wafer, insemiconductor manufacturing processes. More specifically, substrates,which are wafers, subjected to a film forming process, CMP, ioninjection, etc., wafers on which wiring patterns are formed, or waferson which wiring patterns have not been formed yet, are stored in thecassette. The wafers stored in the cassette c are arranged verticallyseparated and in parallel with each other. Accordingly, an arm of theafter-mentioned first conveyance unit is configured to be verticallymoved so as to hold the wafer at any position by the first conveyanceunit.

Mini-Environment Apparatus

In FIGS. 1 to 3, the mini-environment device 20 includes: a housing 22that defines an atmosphere-controlled mini-environment space 21; a gascirculator 23 that circulates gas, such as cleaned air, to control anatmosphere in the mini-environment space 21; an evacuator 24 thatcollects and evacuates a part of air supplied in the mini-environmentspace 21; and a prealigner 25 that is disposed in the mini-environmentspace 21 and roughly positions a substrate as an inspection object,i.e., a wafer.

The housing 22 includes a top wall 221, a bottom wall 222, andsurrounding walls 223 that surround the periphery, and thus has astructure that isolates the mini-environment space 21 from the outside.As shown in FIG. 3, in order to control the atmosphere in themini-environment space, the gas circulator 23 includes: a gas supplyunit 231 that is attached to the top wall 221 in the mini-environmentspace 21, cleans the gas (air in this embodiment), and flows the cleanedair as a laminar flow directly downward through one or more gas outlet(not shown); a collection duct 232 that is disposed on the bottom wall222 in the mini-environment space, and collects the air having flowndown toward the bottom; and a pipe 233 that communicates with thecollection duct 232 and the gas supply unit 231, and returns thecollected air to the gas supply unit 231. In this embodiment, the gassupply unit 231 captures about 20% of the air to be supplied, from theoutside of the housing 22 and cleans the captured air. However, theratio of the air captured from the outside is arbitrarily selected. Thegas supply unit 231 includes a HEPA or ULPA filter that has a publiclyknown structure for creating cleaned air. The downward laminar flow ofthe cleaned air, i.e., the downflow, is supplied mainly so as to flowover a conveyance surface of the after-mentioned first conveyance unitdisposed in the mini-environment space 21. The flow prevents dust thatmay possibly be caused by the conveyance unit from adhering to thewafer. Accordingly, the downflow nozzle is not necessarily disposed at aposition near the top wall as shown in the figure. The nozzle may bedisposed at any position above the conveyance surface of the conveyanceunit. The air is not necessarily flown over the entire surface of themini-environment space. In some cases, an ion wind is used as thecleaned air to secure cleanness. A sensor for observing the cleannessmay be provided in the mini-environment space, and the apparatus can beshut down when the cleanness is degraded. A gateway 225 is formed at aportion of the surrounding wall 223 of the housing 22 that is adjacentto the cassette holder 10. A shutter device having a publicly knownstructure may be provided adjacent to the gateway 225 to shut thegateway 225 from a side of the mini-environment device. The downflow ofthe laminar flow formed adjacent to the wafer may have, for instance, aflow rate of 0.3 to 0.4 m/sec. The gas supply unit may be providedoutside of the mini-environment space, instead of the inside of thisspace.

The evacuator 24 includes: an intake duct 241 disposed at a positionbelow a wafer conveyance surface of the conveyance unit, at a lower partof the conveyance unit; a blower 242 disposed outside of the housing 22;and a pipe 243 that communicates with the intake duct 241 and the blower242. The evacuator 24 sucks, into intake duct 241, the gas that flowsaround the conveyance unit and may contain dust that may possibly becaused by the conveyance unit, and evacuates the gas out of the housing22 through the pipes 243 and 244 and the blower 242. In this case, thegas may be evacuated into an exhaust pipe (not shown) drawn adjacent tothe housing 22.

The aligner 25 disposed in the mini-environment space 21 optically ormechanically detects an orientation flat (a flat part formed at thecircumference of the circular wafer) formed at the wafer or one or moreV-shaped notches formed at the circumference of the wafer, andpreliminarily positions the wafer in the turning direction about theaxis O-O of the wafer at an accuracy of about ±1 degree. The prealignerconfigures a part of a mechanism of determining the coordinates of aninspection object according to the invention described in claims, andfunctions to roughly position the inspection object. The prealigneritself may be a prealigner having a publicly known structure.Accordingly, description on the structure and operations is omitted.

Although not shown, a collection duct for the evacuator may be providedalso at the lower part of the prealigner to evacuate air including dustejected from the prealigner to the outside.

Main Housing

In FIGS. 1 and 2A, the main housing 30, which defines a working chamber31, includes a housing main body 32. The housing main body 32 issupported by a housing supporter 33 mounted on a vibration isolatingdevice, or a vibration isolator 37, disposed on a base frame 36. Thehousing supporter 33 includes a frame structure 331 configured into arectangular shape. The housing main body 32, which is disposed and fixedonto the frame structure 331, includes a bottom wall 321 mounted on theframe structure, a top wall 322, surrounding walls 323 that areconnected to the bottom wall 321 and the top wall 322 and surround theperiphery, and isolates the working chamber 31 from the outside. In thisembodiment, the bottom wall 321 is made of steel plates having arelatively large thickness not to cause distortion due to the weight ofa device, such as a stage device, mounted on this wall. However, thebottom wall may have another structure. In this embodiment, the housingmain body and the housing supporter 33 are configured to have rigidstructures. The configuration allows the vibration isolator 37 toprevent vibrations of a floor on which the base frame 36 is installedfrom being transferred to the rigid structures. A gateway 325 throughwhich a wafer is carried in and out is formed at a surrounding walladjacent to the after-mentioned loader housing among the surroundingwalls 323 of the housing main body 32.

The vibration isolator may be an active isolator having an air spring, amagnetic bearing or the like, or a passive isolator including thesecomponents. Each of the isolators may be an isolator having a publiclyknown structure. Accordingly, description on the structure andoperations is omitted. The atmosphere in the working chamber 31 is keptin a vacuum atmosphere by a vacuum device (not shown) having a publiclyknown structure. A controller 2 that controls the operations of theentire apparatus is disposed at the bottom of the base frame 36.

Loader Housing

In FIGS. 1, 2A and 4, the loader housing 40 includes a housing main body43 that defines a first loading chamber 41 and a second loading chamber42. The housing main body 43 includes a bottom wall 431, a top wall 432,surrounding walls 433 that surround the periphery, and a partition wall434 that separates the first loading chamber 41 and the second loadingchamber 42 from each other. The structure can separate both the loadingchambers from the outside. An opening, or a gateway 435, through which awafer is exchanged between both the loading chambers is formed at thepartition wall 434. Gateways 436 and 437 are formed at portions of thesurrounding walls 433 adjacent to the mini-environment device and themain housing. The housing main body 43 of the loader housing 40 ismounted on the frame structure 331 of the housing supporter 33, andsupported by this structure. Accordingly, vibrations of the floor arenot transmitted to loader housing 40 either. The gateway 436 of theloader housing 40 and the gateway 226 of the housing 22 of themini-environment device match with each other. A shutter device 27 thatselectively blocks communication between the mini-environment space 21and the first loading chamber 41 is provided at the matching portion.The shutter device 27 includes: a seal member 271 that surrounds thegateways 226 and 436 and is in close contact with and fixed to the sidewall 433; a door 272 cooperates with the seal member 271 to prevent theair from flowing through the gateways; and a drive device 273 that movesthe door. The gateway 437 of the loader housing 40 and the gateway 325of the housing main body 32 match with each other. A shutter device 45is provided that selectively blocks communication between the secondloading chamber 42 and the working chamber 31. The shutter device 45includes: a seal member 451 that surrounds the gateways 437 and 325 andis in close contact with and fixed to the respective side walls 433 and323; a door 452 that cooperates with seal member 451 to blockcommunication of air through the gateways; and a drive device 453 thatmoves the door. Furthermore, a shutter device 46 that closes the door461 to selectively seal and block communication between the first andsecond loading chambers is provided at an opening formed at thepartition wall 434. In closed states, the shutter devices 27, 45 and 46can hermetically seal the corresponding chambers. These shutter devicesmay be devices having a publicly known structure. Accordingly, detaileddescription on the structure and operations is omitted. The method ofsupporting the housing 22 of the mini-environment device 20 is differentfrom the method of supporting the loader housing. In order to preventvibrations of the floor from being transmitted to the loader housing 40and the main housing 30 through the mini-environment device, a vibrationisolating cushion member is preferably disposed between the housing 22and the loader housing 40 so as to hermetically surround the gateway.

A wafer rack 47 that vertically separates a plurality of (two in thisembodiment) wafers and horizontally supports the wafers is arranged inthe first loading chamber 41. As shown in FIGS. 5A and 5B, the waferrack 47 includes pillars 472 fixed in a manner of being separated at thefour corners of a rectangular substrate 471 in a state of standingupright. Two stages of supporters 473 and 474 are formed at each pillar472. The periphery of the wafer W is mounted on the supporters, and thusthe wafer is held. The distal ends of the arms of the after-mentionedfirst and second conveyance units are moved to approach the wafersbetween the adjacent pillars, and the arms hold the wafers.

The atmospheres of the loading chambers 41 and 42 can be controlled to ahigh vacuum (a degree of vacuum of 10⁻⁵ to 10⁻⁶ Pa) by a vacuumevacuator (not shown) that has a publicly known structure including avacuum pump (not shown). In this case, the first loading chamber 41 maybe kept in a low vacuum atmosphere and serve as a low vacuum chamber,and the second loading chamber 42 may be kept in a high vacuumatmosphere and serve as a high vacuum chamber. This structure canefficiently prevent wafer from being contaminated. Adoption of thestructure can convey a wafer that is stored in the loading chamber andto be subjected to defect inspection at the next time, into the workingchamber without delay. Adoption of such a loading chamber can improvethe throughput of defect inspection, and achieve a degree of vacuum ashigh as possible around an electron source, which is required to bestored in a high vacuum state.

A vacuum exhaust pipe and a vent pipe for inert gas (e.g., dry purenitrogen) (both the pipes are not shown) communicate to first and secondloading chambers 41 and 42, respectively. According to thisconfiguration, an atmospheric pressure state in each loading chamber canbe achieved by the inert gas vent (inert gas is injected to preventoxygen gas etc. other than inert gas from adhering to the surface). Thedevice for such inert gas venting may be a device having a publiclyknown structure. Accordingly, the detailed description is omitted.

Stage Device

The stage device 50 includes: a fixed table 51 disposed on the bottomwall 321 of the main housing 30; a Y table 52 that moves in the Ydirection (the direction perpendicular to the sheet of FIG. 1) on thefixed table; an X table 53 that moves in the X direction (the lateraldirection in FIG. 1) on the Y table; a turn table 54 that can turn onthe X table; and a holder 55 disposed on the turn table 54. A wafer isreleasably held on a wafer-mounting surface 551 of the holder 55. Theholder may be a holder that has a publicly known structure and canreleasably grip a wafer mechanically or according to an electrostaticchuck system. The stage device 50 can highly accurately position a waferheld by the holder on the mounting surface 551, in the X direction, Ydirection and the Z direction (the vertical direction in FIG. 1), andfurther in a direction (θ direction) about an axis perpendicular to thewafer holding surface, with respect to an electron beam emitted from theelectronic optical device, by moving the tables using servomotors,encoders and various sensors (not shown). As to the positioning in the Zdirection, for instance, the position of the mounting surface on theholder may preferably be slightly adjusted in the Z direction. In thiscase, the reference position of the mounting surface is detected by aposition measuring instrument using fine diameter laser (a laserinterferometric distance meter adopting the principle of aninterferometer), and the position is controlled by a feedback circuit,not shown. Together with or instead of this control, the position of thenotch or the orientation flat of the wafer is measured to detect theplanar position and the turning position of the wafer with respect tothe electron beam, and the positions are controlled by turning the turntable by a stepping motor or the like capable of fine angle control. Inorder to prevent dust from occurring in the working chamber as much aspossible, servomotors 521 and 531 and encoders 522 and 532 for the stagedevice are disposed out of the main housing 30. The stage device 50 maybe, for instance, a device used in a stepper or the like having apublicly known structure. Accordingly, detailed description on thestructure and operations is omitted. The laser interferometric distancemeter may be a meter having a publicly known structure. Accordingly,detailed description on the structure and operations is omitted.

The wafer turning position and the X and Y positions with respect to theelectron beam are preliminarily input into an after-mentioned signaldetection system or an image processing system to allow the signal to bestandardized. Furthermore, a wafer chuck mechanism provided in theholder can apply a voltage for chucking a wafer to an electrode of anelectrostatic chuck, and press three points on the circumference of thewafer (the points preferably separated by regular intervals in thecircumferential direction) for positioning. The wafer chuck mechanismincludes two fixed positioning pins, and one pressing crank pin. Theclamp pin can achieve automatic chucking and automatic releasing, andconfigures a conduct part for voltage application.

In this embodiment, the table moving in the lateral direction in FIG. 2Ais the X table, and the table moving in the vertical direction is the Ytable. Instead, the table moving in the lateral direction may be the Ytable, and the table moving in the vertical direction may be the X tablein this diagram.

Loader

The loader 60 includes: a robotic first conveyance unit 61 disposed inthe housing 22 of the mini-environment device 20; and a robotic secondconveyance unit 63 disposed in the second loading chamber 42.

The first conveyance unit 61 includes a multi-axial arm 612 capable ofturning about an axis O₁-O₁ with respect to a driver 611. Themulti-axial arm may be an arm having any configuration. In thisembodiment, the arm includes three parts attached in a manner capable ofturning with respect to each other. A part of the arm 612 of the firstconveyance unit 61, i.e., a first part nearest the driver 611, isattached to a shaft 613 that can be turned by a drive mechanism (notshown) that has a publicly known structure and provided in the driver611. The arm 612 can be turned about the axis O₁-O₁ by the shaft 613,and extend and contract in the radial direction with respect to the axisO₁-O₁ as a whole by relative turning between the components. A distalend of a third part of the arm 612 that is most opposite to the shaft613 is provided with a grip device 616 that has a publicly knownstructure, such as a mechanical chuck or electrostatic chuck, and gripsa wafer. The driver 611 can be vertically moved by a lifting mechanism615 having a publicly known structure.

The first conveyance unit 61 extends the arm 612 toward any one ofdirections M1 and M2 of the two cassettes c held by the cassette holder,mounts one wafer stored in the cassette c on the arm or grips the waferusing a chuck (not shown) attached to the distal end of the arm, andpicks up the wafer. Subsequently, the arm is contracted (a state shownin FIG. 2A), turns to a position allowing the arm to extend in adirection M3 of the prealigner 25, and stops at this position. The armthen extends again, and mounts the wafer held by the arm on theprealigner 25. After the wafer is received from the prealigner in amanner inverted from the above description, the arm further turns andstops at a position allowing the arm to extend toward the second loadingchamber 41 (direction M4), and exchanges the wafer with the wafer rack47 in the second loading chamber 41. In the case of mechanicallygripping the wafer, the peripheral portion of the wafer (a range withinabout 5 mm from the periphery) is grasped. This gripping manner isadopted because a device (circuit wiring) is formed on the entiresurface except for the peripheral part of the wafer and gripping of thisportion breaks the device and causes a defect.

The second conveyance unit 63 has a structure basically identical to thestructure of the first conveyance unit. The structure is different onlyin that the wafer is conveyed between the wafer rack 47 and the mountingsurface of the stage device. Accordingly, the detailed description isomitted.

In the loader 60, the first and second conveyance units 61 and 63 conveya wafer from the cassette held in the cassette holder onto the stagedevice 50 disposed in the working chamber 31 and convey a wafer in theinverse direction, in a state where the wafer is maintained in ahorizontal orientation. The arm of the conveyance unit vertically movesonly in the cases where the wafer is picked up from and inserted intothe cassette, the wafer is mounted on and picked up from the wafer rack,and the wafer is mounted on and picked up from the storage device.Accordingly, even a large wafer, e.g., a wafer having a diameter of 30cm, can be smoothly moved.

Wafer Conveyance

Next, conveyance of a wafer from the cassette c supported by thecassette holder to the stage device 50 disposed in the working chamber31 will be sequentially described.

In the case of manually setting the cassette, the cassette holder 10 maybe a holder having a structure suitable to the setting manner. In thecase of automatically setting the cassette, the cassette holder 10 maybe a holder having a structure suitable to the setting manner. In thisembodiment, after the cassette c is set on the lifting table 11 of thecassette holder 10, the lifting table 11 is lowered by the liftingmechanism 12 to match the cassette c with the gateway 225.

After the cassette matches with the gateway 225, a cover (not shown)provided on the cassette opens. Furthermore, a cylindrical cover isdisposed between the cassette c and the gateway 225 of themini-environment. The configuration isolates the insides of the cassetteand the mini-environment space from the outside. These structures arepublicly known. Accordingly, detailed description on the structures andoperations is omitted. In the case where a shutter device that opens andcloses the gateway 225 is provided on the mini-environment device 20,the shutter device operates to open the gateway 225.

Meanwhile, the arm 612 of the first conveyance unit 61 stops in any ofstates of orientations in the directions M1 and M2 (the direction M1 inthis direction). After the gateway 225 opens, the arm extends andreceives one of the wafers stored in the cassette at the distal end ofthe arm. The vertical positions of the arm and the wafer to be picked upfrom the cassette are adjusted by vertically moving the driver 611 andthe arm 612 of the first conveyance unit 61 in this embodiment. Instead,the movement may be achieved by vertically moving the lifting table ofthe cassette holder. Both movements may be adopted.

After the arm 612 has received the wafer, the arm is contracted. Thegateway is closed by operating the shutter device (in the case with theshutter device). Next, the arm 612 comes into a state capable ofextending in the direction M3 by turning about the axis O₁-O₁. The armthen extends and mounts, on the prealigner 25, the wafer mounted on thedistal end of the arm or gripped by the chuck. The prealigner positionsthe orientation of the wafer in the turning direction (the directionabout a central axis perpendicular to the wafer surface) within aprescribed range. After the positioning has been completed, theconveyance unit 61 receives the wafer from the prealigner 25 at thedistal end of the arm and subsequently the arm is contracted to have anorientation allowing the arm to extend toward in the direction M4. Thedoor 272 of the shutter device 27 then operates to open the gateways 226and 436, the arm 612 extends to mount the wafer on the upper stage orthe lower stage of the wafer rack 47 in the first loading chamber 41. Asdescribed above, before the shutter device 27 opens and the wafer iscarried into the wafer rack 47, the opening 435 formed at the partitionwall 434 is hermetically closed by the door 461 of the shutter device46.

In the process of conveying the wafer by the first conveyance unit,cleaned air flows as a laminar flow (as a downflow) from the gas supplyunit 231 provided on the housing of the mini-environment device. Theflow prevents dust from adhering to the upper surface of the waferduring conveyance. A part of air around the conveyance unit (about 20%of air that is supplied from a supply unit and mainly dirty in thisembodiment) is sucked from the intake duct 241 of the evacuator 24 andevacuated out of the housing. The remaining air is collected through thecollection duct 232 provided at the bottom of the housing, and returnedto the gas supply unit 231 again.

After the wafer is mounted in the wafer rack 47 in the first loadingchamber 41 of the loader housing 40 by the first conveyance unit 61, theshutter device 27 is closed to seal the inside of the loading chamber41. The inert gas is then charged in the first loading chamber 41 toevacuate the air, and subsequently the inert gas is also evacuated. Theinside of the loading chamber 41 is thus in a vacuum atmosphere. Thevacuum atmosphere of the first loading chamber may be a low degree ofvacuum. After a certain degree of vacuum is achieved in the loadingchamber 41, the shutter device 46 operates to open the gateway 434having being hermetically closed with the door 461, the arm 632 of thesecond conveyance unit 63 extends, and receives one wafer from the waferrack 47 by the grip device at the distal end (mounted on the distal endor gripped by the chuck attached to the distal end). After the wafer hasbeen received, the arm is contracted, the shutter device 46 operatesagain, and the gateway 435 is closed with the door 461. Before theshutter device 46 opens, the arm 632 preliminarily becomes in anorientation capable of extending in the direction N1 toward the waferrack 47. As described above, before the shutter device 46 opens, thegateways 437 and 325 are closed with the door 452 of the shutter device45, communication between the insides of the second loading chamber 42and the working chamber 31 is blocked in a hermetical state, and theinside of the second loading chamber 42 is vacuum-evacuated.

After the shutter device 46 closes the gateway 435, the inside of thesecond loading chamber is vacuum-evacuated again to be in a degree ofvacuum higher than the degree in the first loading chamber. Meanwhile,the arm of the second conveyance unit 61 turns to a position capable ofextending in the direction toward the stage device 50 in the workingchamber 31. On the other hand, in the stage device in the workingchamber 31, the Y table 52 moves upward in FIG. 2A to a position wherethe center line X₀-X₀ of the X table 53 substantially matches with the Xaxis X₁-X₁ crossing the turning axis O₂-O₂ of the second conveyance unit63. The X table 53 moves to a position approaching the left-mostposition in FIG. 2A. The tables are thus in a waiting state. When thesecond loading chamber becomes a state substantially identical to avacuum state in the working chamber, the door 452 of the shutter device45 operates to open the gateways 437 and 325, the arm extends, and thusthe distal end of the arm holding the wafer approaches the stage devicein the working chamber 31. The wafer is mounted on the mounting surface551 of the stage device 50. After the wafer has been mounted, the arm iscontracted, and the shutter device 45 closes the gateways 437 and 325.

The operations of conveying the wafer in the cassette c onto the stagedevice has been described above. However, the wafer mounted on the stagedevice and in a state where the processes have been completed isreturned from the stage device to the cassette c according to invertedoperations with respect to the aforementioned operations. Since themultiple wafers are mounted on the wafer rack 47, a wafer can beconveyed between the cassette and the wafer rack by the first conveyanceunit during conveyance of a wafer between the wafer rack and the stagedevice by the second conveyance unit. Accordingly, the inspectionprocess can be efficiently performed.

More specifically, in the case where a processed wafer A and anunprocessed wafer B are on the wafer rack 47 of the second conveyanceunit, (1) first, the unprocessed wafer B is moved to the stage device50, and the process is started, and (2) during the process, theprocessed wafer A is moved by the arm from the stage device 50 to thewafer rack 47, and the unprocessed wafer C is picked up from the waferrack also by the arm, positioned by the prealigner, and subsequentlymoved to the wafer rack 47 of the loading chamber 41.

Thus, in the wafer rack 47, during the process on the wafer B, theprocessed wafer A can be replaced with the unprocessed wafer C.

According to certain usage of such an apparatus performing inspection orevaluation, multiple stage devices 50 may be arranged in parallel, andthe wafer may be moved from one wafer rack 47 to each apparatus, therebyallowing multiple wafers to be subjected to the same process.

FIG. 6 shows a variation of a method of supporting a main housing. Inthe variation shown in FIG. 6, the housing supporter 33 a includes asteel plate 331 a that is thick and rectangular. A housing main body 32a is mounted on the steel plate. Accordingly, a bottom wall 321 a of thehousing main body 32 a has a thinner structure than the bottom wall ofthe aforementioned embodiment. In a variation shown in FIG. 7, a housingmain body 32 b and a loader housing 40 b are suspended and supported bya frame structure 336 b of a housing supporter 33 b. The bottom ends ofmultiple vertical frames 337 b fixed to the frame structure 336 b arefixed to the four corners of the bottom wall 321 b of the housing mainbody 32 b. The bottom wall supports surrounding walls and a top wall.Vibration isolators 37 b are disposed between the frame structure 336 band the base frame 36 b. The loader housing 40 is also suspended by asupporting member 49 b fixed to the frame structure 336. In thevariation of the housing main body 32 b shown in FIG. 7, the support isachieved by suspension. Accordingly, in this variation, the centers ofgravity of the main housing and all the devices provided in this housingcan be lowered. The method of supporting the main housing and the loaderhousing, which includes the variations, prevents vibrations of the floorfrom being transmitted to the main housing and the loader housing.

In another variation, not shown, only the housing main body of the mainhousing may be supported by a housing supporting device from the lowerside, and the loader housing may be disposed on the floor according tothe same method as of the adjacent mini-environment device. In a stillanother variation, not shown, only the housing main body of the mainhousing may be supported by the frame structure in a suspending manner,and the loader housing may be disposed on the floor according to thesame method as of the adjacent mini-environment device.

The embodiments can exert the following advantageous effects.

(A) The entire configuration of the mapping projection inspectionapparatus that uses an electron beam can be acquired, and inspectionobjects can be processed at high throughput.(B) In the mini-environment space, cleaned gas flows around theinspection object to prevent dust from adhering, and the sensorsobserving cleanness are provided. Thus, the inspection object can beinspected while dust in the space is monitored.(C) The loading chamber and the working chamber are integrally supportedvia the vibration isolation device. Accordingly, the inspection objectcan be supplied to the stage device and inspected without being affectedby the external environment.

Electronic Optical Device

The electronic optical device 70 includes the lens tube 71 fixed to thehousing main body 32. This tube internally includes: an optical systemincluding a primary light source optical system (hereinafter, simplyreferred to as “primary optical system”) 72 and a secondary electronicoptical system (hereinafter, simply referred to as “secondary opticalsystem”) 74; and a detection system 76. FIG. 8 is a schematic diagramshowing an overview of a configuration of a “light irradiation type”electronic optical device. The electronic optical device of thisembodiment may be an after-mentioned “electronic irradiation type”electronic optical device. In the electronic optical device (lightirradiation electronic optical device) in FIG. 8, a primary opticalsystem 72, which is an optical system irradiating a surface of a wafer Was an inspection object with a light beam, includes a light source 10000that emits the light beam, and a mirror 10001 that changes the directionof the light beam. In the light irradiation electronic optical device,the optical axis of the light beam 10000A emitted from the light sourceis inclined from the optical axis (perpendicular to the surface of thewafer W) of photoelectrons emitted from the wafer W, which is theinspection object.

The detection system 76 includes a detector 761 disposed on an imagingsurface of a lens system 741, and an image processor 763.

Light Source (Light Beam Source) In the electronic optical device inFIG. 8, a DUV laser light source is adopted as a light source 10000. TheDUV laser light source 10000 emits DUV laser light. Another light sourcemay be adopted that allows photoelectrons to emit from a substrateirradiated with light from the light source 10000, such as UV, DUV, andEUV light and laser, X-rays and X-ray laser.

Primary Optical System

An optical system where a light beam emitted from the light source 10000forms a primary light beam, with which a surface of the wafer W isirradiated, forming a rectangular or circular (or elliptical) beam spot,is referred to as a primary optical system. The light beam emitted fromthe light source 10000 passes through an objective lens optical system724, and the light beam serves as the primary light beam with which thewafer WF on the stage device 50 is irradiated.

Secondary Optical System

A two-dimensional image of photoelectrons caused by the light beam withwhich the wafer W is irradiated passes through a hole formed at themirror 10001, is formed at a field stop position by electrostatic lenses(transfer lenses) 10006 and 10009 through a numerical aperture 10008,enlarged and projected by a lens 741 thereafter, and detected by thedetection system 76. The image-forming projection optical system isreferred to as a secondary optical system 74.

Here, a minus bias voltage is applied to the wafer. The difference ofpotentials between the electrostatic lens 724 (lenses 724-1 and 724-2)and the wafer accelerates the photoelectrons caused on the surface ofthe sample to exert an advantageous effect of reducing chromaticaberration. An extracted electric field in the objective lens opticalsystem 724 is 3 to 10 kV/mm, which is a high electric field. There is arelationship where increase in extracted electric field exertsadvantageous effects of reducing aberrations and improving resolution.Meanwhile, increase in extracted electric field increases voltagegradient, which facilitates occurrence of evacuated. Accordingly, it isimportant to select and use an appropriate value of the extractedelectric field. Electrons enlarged to a prescribed magnification by thelens 724 (CL) is converged by the lens (TL1) 10006, and forms acrossover (CO) on the numerical aperture 10008 (NA). The combination ofthe lens (TL1) 10006 and the lens (TL2) 10009 can zoom themagnification. Subsequently, the enlarged projection is performed by thelens (PL) 741, and an image is formed on an MCP (micro channel plate) onthe detector 761. In this optical system, NA is disposed betweenTL1-TL2. The system is optimized to configure an optical system capableof reducing off-axis aberrations.

Detector

A photoelectronic image from the wafer to be formed by the secondaryoptical system is amplified by the micro channel plate (MCP),subsequently collides with a fluorescent screen and converted into anoptical image. According to the principle of the MCP, a prescribedvoltage is applied using a hundred of significantly fine, conductiveglass capillaries that are bundled to have a diameter 6 to 25 μm and alength of 0.24 to 1.0 mm and formed into a shape of a thin plate,thereby allowing each of the capillaries to function as independentelectronic amplifier; the entire capillaries thus form an integratedelectronic amplifier.

The image converted into light by the detector is projected on a TDI(time delay integration)-CCD (charge coupled device) by an FOP (fiberoptical plate) system disposed in the atmosphere through a vacuumtransmissive window in one-to-one mapping. According to anotherprojection method, the FOP coated with fluorescent material is connectedto the surface of a TDI sensor, and a signal electronically/opticallyconverted in a vacuum may be introduced into the TDI sensor. This casehas a more efficient transmittance and efficiency of an MTF (modulationtransfer function) than the case of being arranged in the atmospherehas. For instance, the transmittance and MTF can be high values of ×5 to×10. Here, the combination of the MCP and TDI may be adopted as thedetector as described above. Instead, an EB (electron bombardment)-TDIor an EB-CCD may be adopted. In the case of adopting the EB-TDI,photoelectrons caused on the surface of the sample and forming atwo-dimensional image is directly incident onto the surface of theEB-TDI sensor. Accordingly, an image signal can be formed withoutdegradation in resolution. For instance, in the case of the combinationof the MCP and TDI, electronic amplification is performed by the MCP,and electronic/optical conversion is performed by fluorescent materialor a scintillator, and information on the optical image is delivered tothe TDI sensor. In contrast, the EB-TDI and the EB-CCD have no componentfor electronic/optical conversion and no transmission component foroptical amplification information and thus have no loss due to thecomponent. Accordingly, a signal can be transmitted to the sensorwithout image degradation. For instance, in the case of adopting thecombination of the MCP and TDI, the MTF and contrast are ½ to ⅓ of theMTF and contrast in the cases of adopting the EB-TDI and the EB-CCD.

In this embodiment, it is provided that a high voltage of 10 to 50 kV isapplied to the objective lens system 724, and the wafer W is arranged.

Description on Relationship of Main Functions of Mapping ProjectionSystem and Overview

FIG. 9 is a diagram showing the entire configuration of this embodiment.However, certain parts of components are abbreviated in the diagram.

In FIG. 9, the inspection apparatus includes the lens tube 71, a lightsource tube 7000, and a chamber 32. The light source 10000 is providedin the light source tube 7000. The primary optical system 72 is disposedon the optical axis of a light beam (primary light beam) emitted fromthe light source 10000. The stage device 50 is installed in the chamber32. The wafer W is mounted on the stage device 50.

Meanwhile, the cathode lens 724 (724-1 and 724-2), the transfer lenses10006 and 10009, the numerical aperture (NA) 10008, the lens 741 and thedetector 761 are disposed on the optical axis of a secondary beamemitted from the wafer W, in the lens tube 71. The numerical aperture(NA) 10008 corresponds to an aperture stop, and is a thin plate that ismade of metal (Mo. etc.) and has a circular hole.

The output of the detector 761 is input into a control unit 780. Theoutput of the control unit 780 is input into a CPU 781. Control signalsof the CPU 781 are input into a light source control unit 71 a, a lenstube control unit 71 b and a stage driving mechanism 56. The lightsource control unit 71 a controls power supply to the light source10000. The lens tube control unit 71 b controls the lens voltages of thecathode lens 724, the lenses 10006 and 10009, and the lens 741, and thevoltage of an aligner (not shown) (control of deflection).

The stage driving mechanism 56 transmits position information of thestage to the CPU 781. The light source tube 7000, the lens tube 71, andthe chamber 32 communicate with a vacuum evacuation system (not shown).Air in the vacuum evacuation system is evacuated by a turbo pump of thevacuum evacuation system, and the inside of the chamber is kept in avacuum. A rough evacuation system that typically adopts a dry pump or arotary pump is disposed on a downstream side of the turbo pump.

When the sample is irradiated with the primary light beam,photoelectrons occur as the secondary beam from the surface of the waferW irradiated with the light beam.

The secondary beam passes through the cathode lens 724, the group of TLlenses 10006 and 10009 and the lens (PL) 741, and is guided to thedetector and formed as an image.

The cathode lens 724 includes three electrodes. It is designed such thatthe lowermost electrode forms a positive electric field with respect tothe potential on the side of the sample W, and electrons (morespecifically, secondary electrons having a small directivity) areextracted and efficiently guided into the lens. Thus, it is effectivethat the cathode lens is bi-telecentric. The secondary beam image-formedby the cathode lens passes through the hole of the mirror 10001.

If the secondary beam is image-formed by only one stage of the cathodelens 724, the effect of the lens is too strong. Accordingly, aberrationeasily occurs. Thus, the two stages of the doublet lens system areadopted for a formation of an image. In this case, the intermediateimage formation position is between the lens (TL1) 10006 and the cathodelens 724. Here, as described above, the bi-telecentric configurationsignificantly exerts an advantageous effect of reducing the aberration.The secondary beam is converged on the numerical aperture (NA) 10008 bythe cathode lens 724 and the lens (TL1) 10006, thereby forming acrossover. The image is formed between the lens 724 and lens (TL1)10006. Subsequently, an intermediate magnification is defined by thelens (TL1) 10006 and the lens (TL2) 10009. The image is enlarged by thelens (PL) 741 and formed on the detector 761. That is, in this example,the image is formed three times as a total.

All the lenses 10006, 10009 and 741 are rotationally symmetrical lensesreferred to as unipotential lenses or einzel lenses. The lenses have aconfiguration including three electrodes. Typically, the external twoelectrodes are zero potential, and control is performed by applying avoltage to the central electrode to exert a lens effect. Theconfiguration is not limited to this lens configuration. Instead, thecase of a configuration including a focus adjustment electrode on thefirst or second stage or both the stages of the lens 724, the case ofincluding dynamic focus adjustment electrode and has a quadrupole orquintuple-pole configuration can be adopted. The field lens function maybe added to the PL lens 741 to reduce off-axis aberrations, and aquadrupole or quintuple-pole configuration may effectively be adopted toincrease the magnification.

The secondary beam is enlarged and projected by the secondary opticalsystem, and image-formed on the detection surface of the detector 761.The detector 761 includes: the MCP that amplitudes electrons; afluorescent plate that converts the electrons into light; a lens oranother optical element for relaying an optical image between the vacuumsystem and the outside; and an image pickup element (CCD etc.). Thesecondary beam is image-formed on the MCP detection surface, andamplified. The electrons are converted into an optical signal by thefluorescent plate, and further converted into a photoelectric signal byan image pickup element.

The control unit 780 reads the image signal of the wafer W from thedetector 761 and transmits the read signal to the CPU 781. The CPU 781inspects defect on a pattern based on the image signal according totemplate matching or the like. The stage device 50 is movable in the XYdirection by the stage driving mechanism 56. The CPU 781 reads theposition of the stage device 50, outputs a drive control signal to thestage driving mechanism 56 to drive the stage device 50, therebysequentially detecting and inspecting images.

As to change in magnification, even if a set magnification, which islens conditions of the lenses 10006 and 10009, is changed, a uniformimage can be acquired on the entire field of view on the detection side.In this embodiment, a uniform image without irregularity can beacquired. However, increase in magnification causes a problem ofdecreasing the brightness of the image. In order to solve the problem,the lens condition of the primary optical system is set such that theamount of emitted electrons per unit pixel is constant when the lenscondition of the secondary optical system is changed to change themagnification.

Precharge Unit

As shown in FIG. 1, the precharge unit 81 is arranged adjacent to thelens tube 71 of the electronic optical device 70 in the working chamber31. This inspection apparatus is an apparatus that inspects a devicepattern and the like formed on the surface of the wafer by irradiatingthe substrate as the inspection object, i.e., wafer, with the electronbeam. The information on the photoelectrons caused by irradiation withthe light beam is information on the surface of the wafer. However, thesurface of the wafer may be charged (charged up) according toconditions, such as a wafer material, the wavelength and energy ofirradiation light or laser. Furthermore, a strongly charged spot and aweakly charged spot may occur on the surface of the wafer. If there isirregularity of the amount of charge on the surface of the wafer, thephotoelectronic information also includes irregularity. Accordingly,correct information cannot be acquired. Thus, in this embodiment, toprevent the irregularity, the precharge unit 81 including a chargedparticles irradiation unit 811 is provided. Before a prescribed spot onthe wafer to be inspected is irradiated with light or laser, chargedparticles are emitted from the charged particles irradiation unit 811 ofthe precharge unit to eliminate charging irregularity. The charging-upon the surface of the wafer preliminarily forms an image of the surfaceof the wafer, which is a detection object. Detection is performed byevaluating the image to operate the precharge unit 81 on the basis ofthe detection.

Embodiment 1 Electronic Optical Device Including Primary Optical SystemUsing Electronic Irradiation Instead of Primary System Using LightIrradiation

The mode has been described where the surface of the sample isirradiated with light, laser or the like, thereby causing photoelectronsfrom the surface of the sample. An embodiment of the present inventionthat is the “electronic irradiation type” primary system emittingelectron beam instead of light will be described. FIGS. 10A and 10B showan example of an inspection apparatus including a typical electron gun.FIG. 10A shows the entire configuration. FIG. 10B shows an enlargedschematic diagram of the electron gun. However, certain parts ofcomponents are abbreviated in the diagram.

In FIG. 10A, the inspection apparatus includes a primary column 71-1, asecondary column 71-2, and a chamber 32. An electron gun 721 is providedin the primary column 71-1. The primary optical system 72 is disposed onthe optical axis of the electron beam (primary beam) emitted from theelectron gun 721. The stage device 50 is installed in the chamber 32,and the sample W is mounted on the stage device 50. Meanwhile, thecathode lens 724, a numerical aperture NA-2, a Wien filter 723, a secondlens 741-1, a numerical aperture NA-3, a third lens 741-2, a fourth lens741-3, and the detector 761 are disposed on the optical axis of thesecondary beam occurring from the sample W in the secondary column 71-2.The numerical aperture NA-3 corresponds to an aperture stop, and is athin plate that is made of metal (Mo. etc.) and has a circular hole. Thenumerical aperture NA-2 is disposed such that the opening is disposed atthe convergence position of the primary beam and the focal point of thecathode lens 724. Accordingly, the cathode lens 724 and the numericalaperture NA-2 configure a telecentric electronic optical system. Morespecifically, in another case, the cathode lens 724 may be two-stagedoublet lens where the first intermediate image formation point isformed on or around the E×B center to configure a bi-telecentricelectronic optical system. This case can reduce aberrations incomparison with the single telecentric case and the non-telecentriccase. Accordingly, a high resolution image forming of awide-field-of-view two-dimensional electronic image can be achieved.That is, aberration can be ½ to ⅓.

The output of the detector 761 is input into the control unit 780. Theoutput of the control unit 780 is input into the CPU 781. The controlsignal of the CPU 781 is input into the primary column control unit 71a, the secondary column control unit 71 b and the stage drivingmechanism 56. The primary column control unit 71 a controls a lensvoltage of the primary optical system 72. The secondary column controlunit 71 b controls lens voltages of the cathode lens 724 and the secondlens 741-1 to fourth lens 741-3, and an electromagnetic field to beapplied to the Wien filter 723. The stage driving mechanism 56 transmitsthe position information of the stage to the CPU 781. The primary column71-1, the secondary column 71-2, and the chamber 32 are connected to thevacuum evacuation system (not shown), the air in the components isevacuated by a turbomolecular pump of the vacuum evacuation system tokeep the insides of the components in a vacuum state.

Primary Beam

The primary beam from the electron gun 721 is subjected to the lenseffect by the primary optical system 72, and enters the Wien filter 723.Here, a rectangular, circular flat, or curved surface (e.g., about r=50μm) chip may be adopted as a chip for the electron gun. LaB6 capable ofdrawing large current is used. The primary optical system 72 may be arotationally asymmetric quadrupole or eightfold-pole electrostatic (orelectromagnetic) lens. This system can cause convergence and divergencein each of the X and Y axes, as with a lens referred to as a cylindricallens. Two or three stages of the lenses may be adopted to optimize eachlens condition, and the shape of a beam irradiation region on thesurface of the sample can be adjusted to have any of rectangular andelliptical shapes without loss of irradiation electrons. Morespecifically, in the case of adopting the electrostatic lens, fourcylindrical rods are adopted. The opposite electrodes are set to havethe same potential, and have voltage characteristics reversed to eachother. The quadrupole lens does not necessarily have a cylindricalshape. Instead, this lens may be a lens that is an electrostaticdeflector and has a shape where a disk for typical use is divided intofour. In this case, the lens can be minimized.

The trajectory of the primary beam, having passed through the primaryoptical system 72, is curved by a deflecting effect of the Wien filter723. The Wien filter 723 only causes charged particles that satisfy theWien condition E=vB to straightly travel, and curves the trajectories ofthe other charged particles, where the magnetic field is orthogonal tothe electric field, and the electric field is E, the magnetic field isB, and the velocity of the charged particles is v. A force FB due to themagnetic field and a force FE due to the electric field are exerted onthe primary beam, and the trajectory of the beam is curved. Meanwhile,the force FB and the force FE exert in respective different directionson the secondary beam. Accordingly, the forces cancel each other,thereby allowing the secondary beam to straightly travel as it is. Thelens voltage of the primary optical system 72 is preset such that theprimary beam forms an image at the opening of the numerical apertureNA-2. The numerical aperture NA-2 prevents a redundant part of theelectron beam that might be scattered in the apparatus from reaching thesurface of the sample, and prevents the sample W from being charged upand contaminated. The field aperture NA-2 and the cathode lens 724(two-stage doublet lens, although not shown) configure a bi-telecentricelectronic optical system. Accordingly, the primary beam, having passedthrough the cathode lens 724, is converted into a parallel beam, withwhich the sample W is irradiated uniformly and evenly. That is,illumination referred to as Köhler illumination in the opticalmicroscope field is achieved.

Secondary Beam

Irradiation of the sample with the primary beam causes secondaryelectrons, reflected electrons or backscattering electrons, as thesecondary beam, from the beam irradiation surface of the sample.Instead, at a certain irradiation energy, mirror electrons are formed.The secondary beam passes through the lens while being subjected to thelens effect of the cathode lens 724. The cathode lens 724 includes threeor four electrodes. It is designed such that the lowermost electrodeforms a positive electric field with respect to the potential of theside of the sample W, and electrons (more specifically, secondaryelectrons having a small directivity and mirror electrons) are extractedand efficiently guided into the lens. The lens effect is exerted byapplying voltages to the first and second electrodes of the cathode lens724 and setting the third electrode to the zero potential. Instead, theeffect is exerted by applying voltages to the first, second and thirdelectrodes and setting the fourth electrode to the zero potential. Thethird electrode in the four-electrode configuration is used for focusadjustment. Meanwhile, the numerical aperture NA-2 is disposed at thefocal point of the cathode lens 724, i.e., the back focus position fromthe sample W. Accordingly, the flux of light of the electron beam fromthe off-center of the field of view (off-axis) is also converted into aparallel beam, and passes through the center position of the numericalaperture NA-2 without vignetting. The numerical aperture NA-3 serves asa role of suppressing the lens aberrations of the cathode lens 724,second lens 741-1 to fourth lens 741-3 with respect to the secondarybeam. The secondary beam, having passed through the numerical apertureNA-2, straightly travels as it is and passes without being subjected tothe deflecting effect of the Wien filter 723. Only electrons having aspecific energy (e.g., secondary electrons, or reflected electrons, orbackscattering electrons) can be guided to the detector 761 by changingthe electromagnetic field applied to the Wien filter 723. With respectto the secondary beam, the cathode lens 724 is an important lens todetermine the aberrations of the secondarily released electronsoccurring from the surface of the sample. Accordingly, a largemagnification is not expected. Thus, in order to reduce the aberrations,the lens is configured to have a bi-telecentric structure, as thecathode lens having the two-stage doublet lens structure. In order toreduce the aberrations (astigmatism etc.) occurring in the Wien filter,which is formed by E×B, an intermediately formed image is set on andaround the E×B center. This setting exerts a great advantageous effectof suppressing increase in aberration. The beam is converged by thesecond lens 741-1 to form a crossover on and around the numericalaperture NA-3. The second lens 741-1 and the third lens 741-2 have azoom lens function, which allows magnification control. At a stage afterthe lens, the fourth lens 741-3 is disposed to enlarge and form an imageon the detector surface. The fourth lens has a five-lens structure. Thefirst, third and fifth stages are set to GND. Positive high voltages areapplied to the second and fourth stages to form a lens. In this state,the second stage has a field lens function, on and around which asecondary intermediate image is formed. At this time, off-axisaberrations can be corrected by the field lens function. The fourth lensfunction enlarges and forms an image. As described above, the image isformed three times as a total. Instead, the image may be formed by thecathode lens and the second lens 741-1 on the detection surface (twiceas a total). All the second lens 741-1 to fourth lens 741-3 may berotationally symmetrical lenses, which are referred to as unipotentiallenses or einzel lenses. Each lens has a three-electrode configuration.Typically, while external two electrodes are set to the zero potential,a voltage applied to the central electrode exerts a lens effect forcontrol. A field aperture FA-2 (not shown) may be disposed at theintermediate image formation point. The field aperture FA-2 is disposedon or around the second stage in the case where the fourth lens 741-3 isa five-stage lens. This aperture is disposed on or around the firststage in the case of a three-stage lens. As with a field stop of anoptical microscope, the field aperture FA-2 restricts the field of viewto a required range. However, in the case of an electron beam, the fieldaperture blocks a redundant part of the beam to prevent the detector 761from being charged up and contaminated. The secondary beam is enlargedand projected by the secondary optical system, and image-formed on thedetection surface of the detector 761. The detector 761 includes an MCPthat amplifies electrons; a fluorescent plate that converts electronsinto light; a lens or another optical element for relaying andtransmitting an optical image between the vacuum system and the outside;and an image pickup element (CCD etc.). The secondary beam isimage-formed on the MCP detection surface and amplified. The electronsare converted into an optical signal by the fluorescent plate, andfurther converted into a photoelectric signal by the image pickupelement. The control unit 780 reads an image signal of the sample fromthe detector 761, and transmits the signal to the CPU 781. The CPU 781inspects defect on a pattern based on the image signal according totemplate matching or the like. The stage device 50 is movable in the XYdirection by the stage driving mechanism 56. The CPU 781 reads theposition of the stage device 50, outputs a drive control signal to thestage driving mechanism 56 to drive the stage device 50, therebysequentially detecting and inspecting images.

“Secondary charged particles” include a part or mixture of secondarilyreleased electrons, mirror electrons, and photoelectrons. In the case ofirradiation with electromagnetic waves, photoelectrons occur from thesurface of the sample. When the surface of the sample is irradiated withcharged particles, such as electron beam, “secondarily releasedelectrons” occur from the surface of the sample, or “mirror electrons”are formed. The “secondarily released electrons” are caused by collisionof an electron beam with the surface of the sample. That is, the“secondarily released electrons” are a part or mixture of the secondaryelectrons, the reflected electrons, and the backscattering electrons.“Mirror electrons” are the emitted electron beam that does not collidewith the surface of the sample and is reflected in proximity to thesurface.

As described above, in the inspection apparatus of this embodiment, thenumerical aperture NA-2 and the cathode lens 724 configure thetelecentric electronic optical system. Accordingly, the sample can beuniformly irradiated with the primary beam. That is, Köhler illuminationcan be easily achieved. As to the secondary beam, all parts of the mainlight beam from the sample W enter the cathode lens 724 perpendicularly(parallel to the lens optical axis), and pass through the numericalaperture NA-2. Accordingly, even peripheral light is not vignetted, andthe image luminance around the periphery of the sample does notdecrease. Variation in energy of electrons varies the image formingposition; i.e., what is called chromatic aberration of magnificationoccurs (specifically, since the secondary electrons have a largevariation in energy, the chromatic aberration of magnification islarge). Arrangement of the numerical aperture NA-2 at the focal point ofthe cathode lens 724 can suppress occurrence of the chromatic aberrationof magnification.

The enlarging magnification is changed after the beam passes through thenumerical aperture NA-2. Accordingly, even if the lens conditions, i.e.,set magnifications, of the third lens 741-2 and the fourth lens 741-3are changed, a uniform image can be acquired on the entire plane of thefield of view on the detection side. In this embodiment, a uniform imagewithout irregularity can be acquired. Typically, a problem occurs inthat increase in enlarging magnification decreases the brightness of theimage. To solve the problem, the lens condition of the primary opticalsystem such that, when the lens condition of the secondary opticalsystem is changed to change the enlarging magnification, the effectivefield of view on the surface of the sample that is determined by thechange has the same size as the size of the electron beam with which thesurface of the sample is irradiated.

That is, increase in magnification reduces the field of viewaccordingly. However, the irradiation energy density of the electronbeam is increased accordingly, which uniformly keeps the signal densityof detected electrons and prevents the brightness of the image fromdecreasing even if the image is enlarged and projected by the secondaryoptical system. The inspection apparatus of this embodiment adopts theWien filter 723 that curves the trajectory of the primary beam butallows the secondary beam to straightly pass. However, the configurationis not limited thereto. Instead, the inspection apparatus may have aconfiguration adopting a Wien filter that allows the trajectory of theprimary beam to straightly pass but curves the trajectory of thesecondary beam. In this embodiment, the rectangular beam is formed bythe rectangular negative electrode and the quadrupole lens. Theconfiguration is not limited thereto. For instance, a rectangular beamor an elliptical beam may be formed from a circular beam. Instead, arectangular beam may be acquired by causing a circular beam to passthrough a slit.

In this example, the two numerical apertures, or the numerical apertureNA-2 and the numerical aperture NA-3, are disposed. The numericalapertures can be selectively used according to the amount of irradiationelectrons. If the amount of irradiation electrons onto the sample issmall, e.g., 0.1 to 10 nA, an appropriate beam diameter of e.g. φ30 toφ300 μm is selected in order to allow the numerical aperture NA-2 toreduce the aberrations of the primary beam and the secondary beam.However, if the amount of irradiation electrons increases, the numericalaperture NA-2 may be charged up owing to adhesion of contamination toinversely degrade the image quality. In such a case, a relatively largediameter of the hole is selected, for instance, the hole of thenumerical aperture NA-2 has a diameter of φ500 to φ3000 μm for use ofcutting peripheral stray electrons. The numerical aperture NA-3 is usedto define the aberration and transmittance of the secondary beam. Thenumerical aperture NA-3 is not irradiated with the primary beam.Accordingly, the aperture has a small amount of adhesion ofcontamination, thereby eliminating image degradation due to charging up.Thus, selection and use of the diameter of the numerical apertureaccording to the magnitude of the amount of irradiation current aresignificantly effective.

In the case of such a primary beam of electron irradiation, thesemiconductor inspection apparatus 1 that adopts the electron gun as theprimary optical system 72 of the electronic optical device 70 has aproblem in that the energy width of electrons increases in the case ofacquiring a large irradiation current. Referring to the drawings,description will be made in detail. FIG. 10B is a schematic diagram ofthe primary optical system 72 of the electronic optical device 70including a typical electron gun 2300.

In the electron gun 2300, a heating power supply 2313 for generatingthermoelectrons flows heated current into a cathode 2310. Theacceleration voltage Vacc is applied to the cathode 2310 by anacceleration power supply 2314. Meanwhile, a voltage is applied to ananode 2311 so as to have a relatively positive voltage with respect tothe cathode 2310, e.g., a voltage difference of 3000 to 5000 V. In thecase where the cathode 2310 is set to −5000 V, the anode 2311 may be setto 0 V. The amount of emission is controlled by a voltage to be appliedto a Wehnelt 2312. The voltage of the Wehnelt 2312 is superimposed tothe acceleration voltage Vacc. For instance, the superimposed voltage: 0to −1000 V. The larger the voltage difference from Vacc is, the smallerthe amount of emission is. The smaller the voltage difference is, thelarger the amount of emission is. The position of a crossover (firstcrossover: 1stCO) formed first by the Wehnelt voltage deviates in theaxial direction accordingly. If the cathode center, the Wehnelt, and theanode center deviate, positional deviation also occurs in X and Ydirections perpendicular to the Z-axis. The released emission iswidened. Among these components, a field aperture FA2320 selects aneffective beam and determines the beam shape. The transmittance for theemission at this time is typically 0.1 to 0.5%. For instance, at anemission of 5 μA, the irradiation current is 5 to 25 nA. Accordingly, anemission of 200 μA to 1 mA is required to acquire, e.g., an irradiationcurrent of 1 μA. At this time, increase in emission increases the widthof energy of electrons due to Boersch effect in a trajectory from thecathode to the first crossover, and from the first crossover to thefield aperture FA. For instance, the width of energy increases from 1.2eV to 10-50 eV at the FA position.

The energy width causes a problem especially at a low LE. The spread inthe Z direction of the trajectory of electrons adjacent to the surfaceof the sample is widened. Description will be made on the basis ofdrawings. FIGS. 11A and 11B are diagrams showing the intensity (amount)of irradiation current of electron beam with which the surface of thesample is irradiated and the energy state, and the state of the beamwith which the surface of the sample is irradiated. FIG. 11A shows theintensity of the irradiation current of the beam with which the surfaceof the sample is irradiated, and the energy state. FIG. 11B shows thestate of the beam with which the surface of the sample is irradiated. Abeam in the case where the energy of the irradiation current of the beamwith which the sample is irradiated is optimal is a beam c. A beam inthe case where the energy of the irradiation current of the beam is lowis a beam a. A beam in the case where an energy of the irradiationcurrent of the beam is the maximum is a beam b. A beam in the case wherethe energy of the irradiation current of the beam is high is a beam d.The relationship between the energy of the electron beam and theintensity (amount) of the irradiation current in a thermoelectronsformation system, such as LaB6, according to Maxwell distribution showsa distribution of FIG. 11A. At this time, as described above, theelectron beams having characteristics due to energy height are beams ato d.

For instance, FIG. 11B shows the case where the beam d with a highenergy correctly collides with the surface of the sample. At this time,the beam d collides with the surface and is not reflected (withoutmirror electron formation). Meanwhile, the beam c, the beam b, and thebeam a are reflected at the respective reflection potential points. Thatis, mirror electrons are formed. The positions in the axial direction,i.e., Z positions, where the beam c, the beam b and the beam a havingdifferent energies are reflected are different from each other. Adifference ΔZ in the Z position occurs. The larger the ΔZ is, the largerthe blurring of the image formed by the secondary optical system is.That is, the mirror electrons formed at the same surface position causepositional deviation on the imaging surface. More specifically, as tothe mirror electrons, deviation in energy causes the reflection pointand the intermediate trajectory to deviate. Accordingly, the deviationcauses large adverse effects. The same relationship holds in an imageformed by the mirror electrons, or an image formed by the mirrorelectrons and secondarily released electrons. The larger the energywidth of the irradiation electron beams, the larger the adverse effectsare (increase in ΔZ). Accordingly, existence of the primary beam withwhich the surface of the sample is irradiated in the state where theenergy width decreases is significantly effective. What is inventedtherefor is the electron source and the primary optical system as shownin FIGS. 12 to 18, which will be described later. These configurationalelements can not only reduce the energy width of the electron beam incomparison with the conventional configuration, but also significantlyincrease the transmittance of the beam of the primary system.Accordingly, the surface of the sample can be irradiated with largecurrent having a narrow energy width. That is, the ΔZ can be small.Accordingly, the positional deviation on the imaging surface in thesecondary optical system decreases, which can achieve low aberration,high resolution, large current, and high throughput. Typically, athermoelectron type electron source (Gun) of LaB6 and the like have anenergy width of about 2 eV in an electron generation portion. As theintensity of occurring current increases, the energy width furtherincreases owing to the Boersch effect and the like according to Coulombrepulsion. For instance, if the emission current of the electron sourceis changed from 5 to 50 μA, the energy width increases, e.g., from 0.6to 8.7 eV. That is, as the current value increases by a factor of ten,the energy width increases by a factor of fifteen. Furthermore, whilethe beam passes through the middle of the primary optical system, theenergy width, such as the space charge effect, increases. In view ofsuch characteristics, in order to allow the electron beam with a narrowenergy width to reach the sample, increase in energy width in theelectron source, and increase in emission current of the electron sourceby increasing the transmittance of the primary optical system are mostimportant. Although there have been no means for achieving thesefeatures, the present invention achieves the features. Advantageouseffects of the features will be described later in embodiments shown inFIGS. 12 to 18.

The intensity of the electron beam (in the case of a high intensity, thebeam b) is not necessarily optimal for taking an image. For instance, ifthe distribution is an energy distribution according to the Maxwelldistribution, the beam intensity (amount) is often at a part with a lowenergy (beam b). In this case, many beams have higher energies than thebeam b has. Accordingly, in some cases, the image quality may bedifferent from the qualities of the images formed by the beams. That is,in the case where the beam d collides with the sample and an image ofthe secondarily released electrons is formed, the beam b has arelatively low energy. Accordingly, the effect is low on the asperitiesof the surface of the sample and mirror electrons are easily formed.That is, the asperities of the surface and the potential difference aresmall, the mirror electron is formed, and an image with a low contrastas a whole in image quality or a glaring image is easily formed.Empirically, it is difficult to acquire an image with a high resolution.In particular, in the case where an oxide film is at the uppermost partof the surface, effects of the amount of electrons colliding with thesurface are large. Accordingly, for instance, increase in emission(e.g., by a factor of ten) increases the energy width by a factor of tenor more in comparison with the case of low emission current. In thiscase, when the surface of the sample is irradiated with the electronbeam with the same landing energy LE, the absolute amount of a portionthat has a higher energy than the beam b has, e.g., the beam d,increases. Accordingly, charging up of the oxide film increases. Theadverse effects of the charging up may disturb the trajectory and imageforming conditions, and prevent a normal image from being taken. Thisproblem is a factor of preventing the irradiation current fromincreasing. In such situations, the beam c (beam with the optimalenergy) can be used that can reduce the amount of the beam d collidingwith the surface of the sample, and suppress the variation in potentialof the oxide film to be low. This use of the beam can suppress theamount of the beam colliding with the sample and acquire a stable image.Note that, as shown in FIG. 11A, the beam c has a lower intensity(amount) than the beam b has. If the beam c with the optimal energy canapproach the beam b with the maximum intensity, the amount of electronscontributing to image formation can be increased accordingly, andincrease the throughput. Thus, it is important that the energy width isset to narrow to reduce the electrons colliding with the surface of thesample. The present invention achieves this feature. The embodimentswill be described with reference to FIGS. 12 to 18.

In FIG. 11B, as LE gradually increases, the beam d collides with thesurface of the sample, and then the beam c collides. As the collidingelectron beam increases, the secondarily released electrons caused bythe increase, in turn, increases. A region in which such mirrorelectrons and secondarily released electrons are mixed is referred to asthe transition region. When the entire primary beam collides with thesurface of the sample, mirror electrons are eliminated, and only thesecondarily released electrons remains. In the case of no collidingelectrons, all the electrons are mirror electrons.

As the Wehnelt voltage is changed to change the emission, the positionof the first crossover is also changed. Every time such changing, thealigner and lens on the downstream are required to be adjusted.

To support new technologies, semiconductor inspection requires defectinspection of a level of 10 nm, such as EUV mask inspection (inspectionon a mask for extreme ultraviolet lithography) and NIL inspection(inspection on a mask for nanoimprint lithography). Thus, reduction inaberrations and increase in resolution are required in the semiconductorinspection apparatus.

In order to reduce aberrations and increase the resolution, it isparticularly required to reduce the aberrations of the secondary opticalsystem. Factors of degrading the mapping system are what is calledenergy aberration (also referred to as chromatic aberration) and coulombblur. Thus, in order to improve aberration in the secondary opticalsystem, it is required to increase acceleration energy in a short timeperiod.

In order to solve such problems, the inventors have invented a primaryoptical system including a new photoelectron generator, and anelectronic optical device including the primary optical system. Theprimary optical system adopts a light source emitting DUV light or DUVlaser. However, the light source is not limited thereto. Instead, UV,EUV or X-ray sources may be adopted. The description will be made withreference to FIG. 12.

As shown in FIG. 12, in a schematic view, this primary optical system2000 includes a light source (not shown), a field aperture (FA) 2010, aphotoelectron generator 2020, an aligner 2030, an E×B deflector (Wienfilter) (not shown), an aperture 2040, and a cathode lens (CL) 2050.

The field aperture 2010 is disposed between an after-mentionedphotoelectronic surface 2021 of the photoelectron generator 2020 and thelight source, and provided with a hole having a prescribed shape. Lightor laser emitted from the light source toward the field aperture 2010passes through the hole of the field aperture 2010. The photoelectronicsurface 2021 is irradiated with the light or laser having a shape of thehole. That is, the light or laser emitted from the light source causesthe photoelectronic surface 2021 to cause photoelectrons having a shapesimilar to the shape of the hole. The light source may be a light sourceemitting light or laser, such as DUV (deep ultraviolet rays), UV(ultraviolet rays), EUV (extreme ultraviolet rays), and X-rays, having awavelength for generating photoelectrons. In this case, particularly,DUV light or laser having a wavelength of λ≦270 nm (i.e., E≧4.7 eV) ispreferably used.

The photoelectron generator 2020 configures one extraction lens thatincludes a photoelectronic surface 2021, and a three-stage extractionlens including a first stage lens 2022, a second stage lens 2023 and athird stage lens 2024. This generator further includes a numericalaperture 2025. The extraction lens may be a magnetic field lens or anelectrostatic lens. In the case of adopting the magnetic field lens, amagnetic field corrector is provided around an after-mentioned numericalaperture 2025. The corrector may effectively be provided around thedownstream of the field lens (not shown) of the secondary optical systemor around an objective lens (not shown). In some cases, the image may becurved by adverse effects of a magnetic field. The corrector is providedto correct the curve. The number of stages of the extraction lens is notlimited to this example.

The photoelectronic surface 2021 includes a base material made of anoptical transmission material, such as sapphire or diamond, and aphotoelectronic material coated thereon, and further includes a planarportion. The structure of the photoelectronic surface 2021 including theplanar portion is also referred to as a planar cathode. In this case,particularly, materials with high thermal conductivities, such assapphire and diamond, are preferably adopted as the base material of thephotoelectronic surface 2021. The thermal conductivities of sapphire anddiamond (sapphire: 30 to 40 W/(K·m), and diamond: 50 to 100 W/(K·m)) arehigher than thermal conductivity of quartz or synthetic quartz (1 to 2W/(K·m)). Accordingly, heat at a portion subjected to electronicirradiation can be quickly dispersed. Thus, damage to thephotoelectronic surface 2021 can be reduced, and reduction in quantumefficiency and occurrence of inconsistency of quantum efficiency can besuppressed. Since the damage to the photoelectronic surface 2021 can besuppressed, the size of the spot of the electronic irradiation can besmall (high power density), and the thickness of the photoelectronicmaterial can be reduced. For instance, in the case where the basematerial is made of synthetic quartz, the quantum efficiency forirradiation onto the photoelectronic surface with CW laser that has awavelength of 266 nm and at a power density of 8000 W/cm² is decreasedto ⅕ of the quantum efficiency for irradiation with laser at a powerdensity of 1000 W/cm². Meanwhile, in the case where the base material ismade of sapphire, the quantum efficiency is not reduced. Not onlynatural but also artificial sapphire or diamond may be adopted.Materials having a low work function (materials with a highphotoelectron generation efficiency), such as ruthenium and gold, arepreferably adopted as the photoelectronic material. For instance, inthis embodiment, the photoelectronic surface may be a surface where thebase material is coated with a photoelectronic material, such asruthenium or gold, having a thickness 5 to 100 nm, preferably, athickness of 5 to 30 nm. As to the shape of the photoelectronic surface2021, the diameter of the base material is, for instance, about 5 to 50mm, and the photoelectronic material is coated in a central region ofthe base material. The coated region has, for instance, a diameter of 2to 10 mm, and preferably a diameter of 3 to 5 mm. A conductive film madeof Cr or the like is coated on a region outside of the photoelectronicmaterial. A voltage can be applied to the photoelectric surface throughthe film. Furthermore, the Cr film has a transmittance for DUV laser,and shields irradiation onto irrelevant components to reduce noiseoccurring from the components. Cr has a photoelectron occurrenceefficiency smaller in order-of-magnitude than the photoelectronicmaterials, such as Au and Ru, has. Accordingly, noise occurringtherefrom also decreases.

The spot coated with the photoelectronic material is irradiated with DUVlaser or the like. The spot has a shape of a disc having a diameter of10 to 300 μm, preferably, 20 to 150 μm, or a shape of a rectangle havinga side of 10 to 300 μm, preferably 10 to 150 μm. However, the scope ofthe present invention is not limited thereto. The light or laser isintroduced through a view port of the base material, and reaches thephotoelectric surface. On the photoelectric surface, photoelectronsoccur.

The extraction lens (extraction electrode) including the first stagelens 2022, the second stage lens 2023, and the third stage lens 2024performs functions that extract photoelectrons occur from thephotoelectronic surface 2021 in the direction opposite to the lightsource and accelerate the extracted photoelectrons. Electrostatic lensesare adopted as these extraction lenses. The Wehnelt is not adopted asextraction lenses 2022, 2023 and 2024. The extracted electric field isconstant. The first extraction electrode 2022, the second extractionelectrode 2023 and the third extraction electrode 2024 preferably have asingle telecentric or bi-telecentric configuration. This configurationis adopted because a significantly uniform extracted electric fieldregion can be formed, and occurring photoelectrons can be transmitted atlow loss.

Voltages applied to the respective extraction lenses are as follows. Inthe case where the voltage of the photoelectronic surface is V1, and thevoltages of the first extraction electrode 2022, the second extractionelectrode 2023 and the third extraction electrode 2024 are V2, V3 andV4, respectively, for instance, V2 and V4 are set to V1+3000 to 30000 V,and V3 is set to V4+10000 to 30000 V. However, the setting is notlimited thereto.

The numerical aperture 2025 is disposed between the third extractionelectrode 2024 of the photoelectron generator 2020 and anafter-mentioned aligner 2030. The numerical aperture 2025 selects aneffective beam in terms of the crossover formation position, the amountof beam, and aberrations.

The aligner 2030 includes a first aligner 2031, a second aligner 2032and a third aligner 2033, and is used to adjust optical axis conditions.The first aligner 2031 and the second aligner 2032 are alignersperforming static operations, and functions as tilting and shifting usedfor adjusting the optical axis conditions. Meanwhile, the third aligner2033 is an aligner used in the case of high speed operations by thedynamic deflector, and, for instance, used for dynamic blankingoperations.

At the downstream of the aligner 2030 (on the sample side; hereinafter,the light source side is referred to as upstream, and the sample side isreferred to as downstream, in the positional relationship with eachcomponent.), the aperture 2040 is disposed. The aperture 2040 is used toreceive a beam during blanking, cut stray electrons, and center thebeam. The amount of electron beam can be measured by measuringabsorption current in the aperture 2040.

An E×B region that intersects with the secondary optical system is atthe downstream of the aperture 2040. An E×B deflector (Wien filter) (notshown) is provided in this region. The E×B deflector deflects theprimary electron beam such that the optical axis is perpendicular to thesurface of the sample.

The cathode lens 2050 is provided at the downstream of the E×B region.The cathode lens 2050 is a lens where both the primary optical systemand the secondary optical system are included. The cathode lens 2050 mayinclude two stages of a first cathode lens 2051 and a second cathodelens 2052, or have single stage configuration. In the case where thecathode lens 2050 has the two-stage configuration, a crossover is formedbetween the first cathode lens 2051 and the second cathode lens 2052. Inthe case where the cathode lens has the single stage configuration, acrossover is formed between the cathode lens 2050 and the sample.

The amount of photoelectrons is defined by the intensity of light orlaser with which the photoelectronic surface is irradiated. Accordingly,this primary optical system 2000 may adopt a system of adjusting theoutput of a light source or a laser light source. Although not shown, anoutput adjusting mechanism, for instance, an attenuator, a beamseparator and the like, may further be provided between the light sourceor the laser light source and the base material.

For instance, in this embodiment, aging procedures may be performed whenthe electronic irradiation is performed. The aging procedures aresequentially performed as follows. First, (1) electronic irradiationwith a large beam size (1 to 2 mm) is performed for five hours. Next,(2) electronic irradiation with an intermediate beam size (100 to 300μm) is performed for two hours. Subsequently, (3) electronic irradiationwith a small beam size (10 to 100 μm) is performed. The procedures canremove dust and contamination adhering to the photoelectronic surface,and provide thermal stable conditions. The dust and contaminationadhering to the photoelectronic surface are, for instance, carbon,hydrocarbon, moisture and the like. Formation of thermal stableconditions can achieve uniformity in thermal conditions, and reducedamage to the photoelectronic surface in the case of increase in heat.The beam size in (3) is a size (size for use) in the case of use as thephotoelectronic source. Accordingly, the beam size in (2) is a beam size3 to 10 times as large as the size for use. The beam size in (1) can beregarded as a beam size 500 to 1000 time as large as the size for use.

Formation of a crossover of in the primary optical system 2000 accordingto the present invention will be described with reference to thedrawings. FIG. 13 is a schematic diagram of formation of the crossoverin the primary optical system 2000 according to the invention of thisapplication. In FIG. 13, it is schematically represented such that thesample is perpendicularly irradiated with photoelectrons occurring onthe photoelectronic surface. However, in actuality, deflection isperformed by the E×B deflector.

As shown in FIG. 13, the photoelectronic surface 2021 is irradiated withlight or laser light through the field aperture 2010 from the lightsource or laser light source. Thus, photoelectrons occurring from thephotoelectronic surface 2021 form a first crossover at the position ofthe numerical aperture 2025, pass through the aperture 2040, aredeflected perpendicularly to the sample by the E×B deflector, and form acrossover between the first cathode lens 2051 and the second cathodelens 2052. The surface of the sample is irradiated with thephotoelectrons forming the crossover as a planar beam. Accordingly, theelectron release shape of the photoelectronic surface 2021 is conjugatewith the shape of the electron beam with which the surface of the sampleis irradiated. Meanwhile, as shown in FIG. 10B, in the primary opticalsystem including a typical electron gun, photoelectrons emitted from thecathode 2310 form the first crossover between the cathode 2310 and theanode 2311, and pass through the anode 2311 and the field aperture 2320;the surface of the sample is irradiated with the photoelectrons.Accordingly, the shape of the field aperture 2320 is conjugate with theshape of the electron beam with which the surface of the sample isirradiated.

Setting of the applied voltages in the primary optical system 2000according to the invention of this application will be described. Theinvention of this application has a configuration different from theconfiguration of a typical electron gun. The photoelectronic surface2021 is irradiated with the light or laser, and occurring photoelectronsare extracted by the extraction lens on the latter stage andaccelerated. Acceleration is performed by a uniform electric fieldwithout a Wehnelt and a suppressor. Accordingly, setting of the voltagesapplied to the respective configurational components is different fromthe setting of the typical electron gun.

Referring to FIG. 12, description will hereinafter be made. Voltagesapplied to the respective configurational components are set as follows.The voltage of the photoelectronic surface 2021 is V1. The voltages ofelectrodes configuring the extraction lens are set such that the voltageof the first extraction electrode 2022 is V2, the voltage of the secondextraction electrode 2023 is V3, the voltage of the third extractionelectrode 2024 is V4, the voltage of the numerical aperture 2025 is V5,and the voltage of the aperture 2040 is V6. A wafer surface voltage(also referred to as retarding voltage) is RTD. In the primary opticalsystem 2000 of the invention of this application, according torepresentation with reference to the voltage V1 of the photoelectronicsurface 2021, the voltages are applied to the respective configurationalcomponents as follows. That is, in the case of a low LE, V1=RTD−10 V toRTD+5 V. V2, V4=V1+3000 to 30000 V. V3=V4+10000 to 30000 V. V5,V6=reference potential. In one embodiment of the primary optical systemaccording to the invention of this application, setting is made suchthat RTD=−5000 V, V1=−5005 V, V2, V4=GND, and V3=+20000 V. Such voltageapplication can achieve high throughput at a low LE and a highresolution. However, this configuration is one example. Voltageapplication to the configurational components is not limited thereto.

In the case where the reference potential is represented as V0, and thevoltage of the surface of the detector on which electrons are incidentis represented as DV, application voltage relationship with RTD in theprimary optical system 2000 according to the invention of thisapplication is preferably setting shown in Table 1.

[Table 1]

The primary optical system 2000 according to the invention of thisapplication that includes the aforementioned configuration, and theelectronic optical device including the primary optical system 2000according to the invention of this application can exert the followingadvantageous effects.

First, the primary optical system 2000 of the invention of thisapplication can achieve a significantly high transmittance. Thetransmittance is 5 to 50%. A transmittance can be secured that is 10 to100 times as high as the transmittance of 0.1 to 0.5% of the primaryoptical system including a typical electron gun. This achievement ismade because, first, the configuration of the planar cathode surface andthe new extraction lens can form a significantly uniform extractedelectric field region to transmit occurring photoelectrons at low loss.Even with increase and decrease in the amount of occurringphotoelectrons, this configuration can achieve a constant extractedelectric field distribution, thereby achieving stable operations at ahigh transmittance. A primary optical system including a typicalelectron gun requires a Wehnelt or a suppressor mechanism. Accordingly,the amount of occurring electrons, i.e., the amount of emission, changesthe electric field distribution, the uniform extracted electric fieldportion is reduced, and the effective beam region is reduced. It istherefore difficult to increase the transmittance. In contrast, theprimary optical system 2000 according to the invention of thisapplication does not require the Wehnelt and the suppressor mechanism,and can increase the transmittance. Second, in the primary opticalsystem 2000 according to the invention of this application, the positionof the first crossover is at the downstream of the lens. Accordingly,the numerical aperture and the like can be easily arranged. Thus, theoptical system that can easily reduce the aberrations of the beam andthe Boersch effect can be achieved. In the primary optical systemincluding a typical electron gun, the position of the first crossover isin proximity to the Wehnelt. Accordingly, it is difficult to arrange thenumerical aperture and the like at the position. Since the positiondeviates due to emission, effective use is difficult even if thenumerical aperture and the like can be arranged at this position. In theprimary optical system 2000 according to the invention of thisapplication, the position of the first crossover can be disposed at thedownstream of the lens. Accordingly, the problem can be solved.

Second, the primary optical system 2000 according to the invention ofthis application can achieve high throughput at high resolution. Asdescribed above, a high transmittance is achieved. Accordingly, only asignificantly small amount of cathode release current intensity of 2 to10 μA is sufficient to achieve high throughput, i.e., the amount ofelectronic irradiation of 1 μA. Accordingly, a significantly smallBoersch effect is sufficient. For instance, at the position of thenumerical aperture, the energy width is 0.5 to 1.2 eV. Thus, the amountof electronic irradiation can be increased with a small energy width.The positional deviation of the beam image-formed in the secondaryoptical system is small, and a high resolution can be maintained. As aresult, a high throughput can be achieved at high resolution.

Third, the primary optical system 2000 according to the invention ofthis application can maintain the optical system in an always stablestate. This feature is achieved because the primary optical system 2000according to the invention of this application does not cause positionaldeviation of the first crossover.

Next, advantageous effects of the electronic optical device includingthe primary optical system 2000 according to the invention of thisapplication will be described later.

First, since the primary optical system 2000 having the aforementionedconfiguration is used, the shape of the electron beam with which thesurface of the sample is irradiated is set to have magnification ×10 to×0.1 with respect to the electron release shape of the photoelectronicsurface. In particular, since use of a scale of magnification ×1 or lessis allowed, which negates the need of reduction in size of thephotoelectronic surface, and can suppress the occurring photoelectrondensity to be low. Accordingly, the electronic optical device of theprimary optical system 2000 according to the invention of thisapplication can reduce the Boersch effect, and suppress the spread ofenergy width.

Second, as to the axial center of the electron generation portion of thephotoelectronic surface, a photoelectron generation portion can beeasily formed at the center position formed by the extraction lens. Thisfeature can be achieved by irradiating the axial center position withthe light or laser. Although FIGS. 12 and 13 do not show the position ofthe light source, the feature can be achieved by using a lens or amirror irrespective of the position of the light source. The primaryoptical system 2000 according to the invention of this application isdisposed in the lens tube fixed to the main housing. However, light orlaser is used to generate photoelectrons. Accordingly, the light sourceis not necessarily disposed in the lens tube. For instance, the lightsource may be disposed outside of the lens tube, and the light or lasercan be guided by a mirror, a lens and the like to the axial center ofthe electron generation portion of the photoelectronic surface. Sincethe light source can thus be disposed on the atmosphere side, theelectronic optical device adopting the primary optical system 2000according to the invention of this application can easily adjust thecenter position. In the inspection apparatus adopting a typical electrongun shown in FIG. 10B, the center positions of the cathode 2310, theWehnelt 2312, the anode 2311 and the field aperture 2320 deviate fromeach other by assembly. Furthermore, positional deviation due to baking,which is performed after opening to the atmosphere occurs. That is,positional variation after assembly caused by being subjected to thermalexpansion and cooling processes due to variation in temperature alsooccurs. In order to correct the deviation, a normal aligner is providedat the upstream of the field aperture 2320, and correction is performedby the aligner. If the positional deviation is large, repetition ofdisassembly, assembly, adjustment, and baking is required. Meanwhile, inthe electronic optical device including the primary optical system 2000according to the invention of this application, only irradiation ontothe axial center position with light or laser can easily form thephotoelectron generation portion at the center position formed by theelectrostatic lens. Accordingly, adjustment is easily performed even ifassembly causes deviation. Furthermore, the light source can be disposedon the atmosphere side. Accordingly, the configuration is resistant tooccurrence of positional variation after assembly, and adjustment caneasily be performed even if positional deviation occurs after assembly.Thus, operation procedures can be significantly reduced, and the costcan be reduced. Furthermore, the field aperture 2010 that defines theelectron generation shape on the photoelectronic surface can be disposedon the atmosphere side. Accordingly, the field aperture 2010 can beeasily replaced. Also in this point, the operation procedures can besignificantly reduced, and the cost is reduced. In the case where thefield aperture is disposed on the vacuum side, replacement requiresoperations, such as vacuum break, disassembly of the column, assembly,adjustment, vacuum disposal, baking, and optical axis adjustment. Theabove feature can be achieved by eliminating these operations.

Third, the electronic optical device including the primary opticalsystem 2000 according to the invention of this application improvesflexibility in beam size. The electron generation shape on thephotoelectronic surface is defined by the field aperture 2010.Accordingly, not only a circular or rectangular shape but also an oblongor a shape asymmetric with respect to the axis may be allowed. Theinspection apparatus including primary optical system 2000 according tothe present invention allows, for instance, a circular shape with φ100μm on the photoelectronic surface and a circular shape with φ50 μm to100 μm on the surface of the sample, and a rectangular shape with100×100 μm on the photoelectronic surface and a rectangular shape with50×50 μm to 100×100 μm on the surface of the sample.

Fourth, the electronic optical device including the primary opticalsystem 2000 according to the invention of this application cansignificantly reduce the number of components residing in a vacuum. Inthe electronic optical device including a typical electron gun, analigner is required in front of the field aperture 2320 shown in FIG.10B to correct deviation in the cathode center, the Wehnelt, the anode,and the field aperture center. Furthermore, a one-to-three-stage lens isrequired to form an image of the beam shape formed by the field aperture2320, on the surface of the sample. Accordingly, the electronic opticaldevice including the primary optical system 2000 according to theinvention of this application does not require these components. Thus,the number of components in a vacuum is significantly reduced.

High throughput at high resolution is achieved by applying theaforementioned electronic optical device including primary opticalsystem of the invention of this application as described above to thesemiconductor inspection apparatus. Accordingly, configuration ispreferably applicable to EUV mask inspection and NIL mask inspection.Also in the case of low LE (landing energy), high resolution can beachieved.

Embodiment 2

Second Embodiment of Primary Optical System A second embodiment of theprimary optical system according to the invention of this applicationwill be described. FIG. 14 is a diagram showing the second embodiment ofthe primary optical system according to the invention of thisapplication. In a schematic view, this primary optical system 2100includes: a light source (not shown), a field aperture (FA) 2110, aphotoelectron generator 2120, an aligner 2130, an E×B deflector (Wienfilter) (not shown), an aperture 2140, a cathode lens (CL) 2150, a firstpipe 10071; and a second pipe (not shown) that stores the primaryoptical system. The second embodiment of the primary optical systemaccording to the invention of this application is characterized in thatthe reference potential is a high voltage. Description will hereinafterbe made mainly on differences from the aforementioned primary opticalsystem according to the invention of this application.

This embodiment has a double structure that includes the first pipe10071 and the second pipe. The photoelectron generator 2120 includes aphotoelectronic surface 2121, an extraction lens 2122, and a numericalaperture 2125.

The first pipe 10071 is for generating a reference voltage in the casewhere the reference voltage is at a high voltage. The high voltage isapplied to the first pipe. The first pipe 10071 is disposed in the holeswhich are provided at the extraction lens 2122, the numerical aperture2125 and the aligner 2130 and through which the primary beam passes, soas to be inscribed in the holes. The diameter is formed to be large onthe latter stage of the aperture 2140. The cathode lens 2150 is arrangedin the portion where the diameter is formed to be large.

The first pipe 10071 may be made of any of materials other than magneticmaterials; there is no other limitation. A thin copper pipe, a thintitanium pipe, or copper-plated or titanium-plated plastic is preferablyadopted. Accordingly, when a high voltage is applied to the first pipe10071, a magnetic field is formed in the first pipe 10071. The fieldhighly accelerates the primary electron beam occurring on thephotoelectronic surface 2121 irradiated with light or laser light.

Although not shown in FIG. 14, the second pipe covers the field aperture(FA) 2110, the photoelectron generator 2120, the aligner 2130, the E×Bdeflector (Wien filter) (not shown), the aperture 2140, the cathode lens(CL) 2150 and the first pipe 10071, and is set to GND. The second pipeis the outermost configurational component. Accordingly, this pipe isset to GND for conductive connection with the other parts of theapparatus and for preventing an electric shock in case where a persontouches the apparatus.

The extraction lens is one lens. The second embodiment of the primaryoptical system according to the invention of this application adopts anelectromagnetic lens. The other configurational components are analogousto the components of the aforementioned embodiment. Accordingly, thedescription is omitted.

The primary optical system 2100 according to the invention of thisapplication can set the sample surface voltage to GND by adopting such adouble structure pipe. The electron beam occurring on thephotoelectronic surface 2121 can be highly accelerated by applying thehigh voltage to the first pipe 10071, which is the inner pipe of thedouble pipe structure. Accordingly, the primary optical system accordingto the invention of this application can be regarded as a highacceleration column.

In the primary optical system 2100 according to the invention of thisapplication (see FIG. 14), the voltages applied to the respectiveconfigurational components are as follows. The voltage of thephotoelectronic surface 2121 is V1. The voltage of the first pipe 10071is V2. The voltage of the numerical aperture NA 2025 is V5. The voltageof the aperture 2140 is V6. The wafer surface voltage (also referred toas retarding voltage) is RTD. In a low LE condition, V1=RTD−10 V toRTD+5 V. V2, V5 and V6 are reference potentials. In one embodiment ofthe invention of this application, setting is made such that RTD=0,V1=−5 V, and the reference potential=40000 V. Such voltage applicationcan achieve high throughput at a low LE and high resolution.

If a magnetic field lens is adopted here, an occurring longitudinalmagnetic field (residual magnetic field in the optical axis) turns thebeam. Accordingly, the two-dimensional photoelectron generation shapeformed on the photoelectronic surface may turn after passing through thegeneration part and the magnetic field lens in some cases. In order tocorrect the turning, a turning correction lens is arranged around NA orat a position downstream of the magnetic field lens to correct adverseeffects. The correction lens at the position downstream of the magneticfield lens is preferably set at a position as close as possible to(immediately after) the magnetic field lens to correct the turning.

In the electrostatic lens primary optical system 2000 (see FIG. 12) ofthe invention of this application, an example of the double pipestructure will be described with reference to the photoelectronicsurface 2021 voltage V1. Voltages are applied to the respectiveconfigurational components as follows. That is, in the case of a low LE,V1=RTD−10 V to RTD+5 V. V2, V5 and V6 are reference potentials.V3=reference voltage+10 to 100 kV. In an embodiment of the invention ofthis application, setting is made such that RTD=0, V1=−5 V, V2=referencepotential+40000 V, and V3=65000 V. The pipe 1 storing these lenses isprovided such that the reference voltage is the reference spatialvoltage. The lens, the aperture and the aligner in FIG. 12 are stored inthe pipe 1 to which the reference voltage is applied. The pipe 2 set toGND potential is arranged outside the pipe 1. The pipe 1 and the pipe 2are fixed to each other by insulative components (the pipe 1 and thepipe 2 are not shown). Such voltage application can achieve highthroughput at a low LE and high resolution.

The primary optical system 2100 according to the invention of thisapplication can exert an advantageous effect that allows inspectionwhile leaving the sample surface voltage RTD to 0 V. Furthermore, theprimary optical system 2100 according to the invention of thisapplication can exert effects analogous to the effects of the primaryoptical system 2000 according to the invention of this application. Theelectronic optical device including the primary optical system accordingto the invention of this application has analogous advantageous effects.Accordingly, the description is omitted.

Variation of Photoelectron Generator in Primary Optical System

Another example of the primary optical system according to the inventionof this application will be described. FIGS. 15 and 16 show exampleswhere light or laser is guided by a mirror arranged in the column from amidpoint in the primary system to the photoelectronic surface.

FIG. 15 is an example where the reference voltage is a high voltage,e.g., 40 kV. That is, the example is an application to the secondembodiment of the primary optical system 2000 according to the inventionof this application. Here, in order to form the reference voltage, avoltage of V2=40 kV is applied to the pipe 10071 to which the highvoltage is to be applied. The inside of the pipe 10071 is an identicalvoltage space. Accordingly, in this example, a mirror having a hole atthe center allowing photoelectrons to pass therethrough, for instance, atriangular mirror 2170 are adopted. DUV light or UV laser is guidedthrough the hole, not shown, provided at the pipe 100071, and reflectedby the triangular mirror 2170 to be incident on the photoelectronicsurface 2121. Photoelectrons occur from the irradiated surface. Thephotoelectrons passes through the EX lens 2120 and NA 2125 and thenpasses through the downstream aligner and emitted onto the surface ofthe sample. Here, occurring photoelectrons form the trajectory of theprimary system. Accordingly, a voltage of a prescribed value is appliedto the photoelectronic surface 2121. It is determined such that LE=RTDvoltage−V1.

FIG. 16 shows an example where the photoelectronic surface is irradiatedwith light or laser for generating photoelectrons by the triangularmirror 2070, as with the example shown in FIG. 15, but the referencevoltage is GND. That is, this example is an application to oneembodiment the primary optical system 2000 according to the invention ofthis application. Here, for instance, V2, V4 and V5 are GND, and areference voltage space are defined therearound. The mirror similar tothe mirror in FIG. 15 is arranged to allow light or laser to beintroduced. Here, the amount of occurring photoelectrons is defined bylaser irradiation intensity. The irradiation intensity is thuscontrolled. For the control, the aforementioned method of controllingthe intensity is used. Here, the surface of the mirror and the entiremirror structure are coated with conductive material. The potential ofthe mirror is identical to the reference potential. The identicalpotential is selected so as not to disturb the space potential. A holeis formed at the optical axis center part of the mirror to allow theprimary beam to pass therethrough without being affected by the mirror.The primary beam passes through this hole. The inner surface of the holeis also coated with the conductive material or a conductor and connectedto the reference voltage part so as to be isopotential with respect tothe reference voltage.

Two methods will be described on photoelectron generating shapes.Description will be made with reference to FIG. 16. One method uses anFA aperture 2010 that defines the beam shape before the beam is incidenton the mirror in the column. A beam having the shape of the fieldaperture (FA) 2010 is formed. The photoelectric surface is irradiatedwith the beam to cause photoelectrons having this shape. Here, theprojection size of the field aperture (FA) 2010 is controlled by theposition of the lens at the upstream of the field aperture (FA) 2010.

The other method coats a masking material of a pattern on thephotoelectronic surface. FIG. 17 is a diagram showing an example wherean example of the photoelectronic surface coated with the maskingmaterial of the pattern is used in the second embodiment of the primaryoptical system according to the primary optical system 2100 according tothe invention of this application. As shown in FIG. 17, a maskingmaterial 2122 is coated on the photoelectronic surface 2121. The maskingmaterial 2122 has a hole that has a pattern shape. No masking materialis coated on the hole portion. No photoelectron occurs from the coatedportions. Photoelectrons occur from portions without the maskingmaterial. That is, during irradiation with DUV light, photoelectronshaving the pattern shape occur from the photoelectric surface portionhaving the pattern without masking. Here, masking material for coatingmay be any material that does not cause photoelectrons. This materialmay be a material having a high work function or a material with a lowoccurring efficiency. For instance, the material may be carbon, Pt, Cror the like. Note that, since charging up forms potential nonuniformityto cause adverse effects, such as curving of the trajectory of thereleased electrons, a conductive material is adopted.

FIG. 18 is a diagram showing a method of reflecting the passing light orlaser to irradiate the photoelectronic surface again, in order tofurther improve the efficiency. Light or laser incident on thephotoelectronic surface 2121 is reflected in an element that allowslight or laser to pass and has a reflection surface structure(reflection surface 2123), and returns to the photoelectronic surface2121, which is thus irradiated again. This method irradiates thephotoelectronic surface 2121 with light or laser multiple times, whichthereby improves the efficiency. For instance, provided that thelight/laser transmittance of the photoelectronic surface 2121 is 60%,repetitive irradiation with 60% of the passing light or laser canimprove the amount of occurring photoelectrons according to the numberof irradiation times. The method is not limited to this example; anymethod of multiple irradiation is effective. In particular, irradiationtwo to five times can enjoy the effectiveness. Since further irradiationtimes reduce the intensity of light or laser, the effectiveness issignificantly reduced. If the multiple times of irradiation are allowedas described above, an advantageous effect can be exerted where theintensity of incident light or laser remains ½ to ⅕ of the case of onetime irradiation. For instance, in the case where an intensity ofirradiation light or laser of 1 W is required, 0.2 to 0.5 W issufficient. In particular, there are a case where a large output lightsource is required, a case without the light source itself, and a casewhere the operation management cost is high. If a low output lightsource can be used here, the use is significantly effective because theuse reduces the adverse effects of cost, efficiency and heat, adverseeffects of deterioration of elements of optical introduction system andthe like.

The examples described with reference to FIGS. 17 and 18 are examples ofapplication to the primary optical system 2100 that pertains to thesecond embodiment of the primary optical system 2100 according to theinvention of this application. However, application is not limitedthereto. The examples may be applied to the primary optical systems 2000according to the other embodiments.

Embodiment 3 Semiconductor Inspection Apparatus Including Double PipeStructure Lens Tube

As described above, the electronic optical device 70 including theprimary optical system 2100, which is described as the second embodimentof the primary optical system according to the invention of thisapplication, is different in setting of voltages applied to therespective configurational components from a typical electron gun. Thatis, reference potential V2 is used as the high voltage (e.g., +40000 V).First, the semiconductor inspection apparatus 1 including the electronicoptical device 70 according to the invention of this application has adouble pipe structure.

Description will be made with reference to FIG. 19. FIG. 19 is a diagramschematically showing the double pipe structure of the semiconductorinspection apparatus according to one embodiment of the presentinvention. In FIG. 19, the first pipe and the second pipe areemphasized. The sections of the actual first pipe and second pipe aredifferent from the illustration. As shown in FIG. 19, the electronicoptical device 70 including the primary optical system 2000 according tothe invention of this application includes two pipes, which are thefirst pipe 10071, and a second pipe 10072 provided outside of the firstpipe 10071. In other words, the device has a double pipe structure. Thedouble pipe structure internally stores a light source, a primaryoptical system, a secondary optical system and a detector. A highvoltage (e.g., +40000 V) is applied to the first pipe 10071. The secondpipe 10072 is set to GND. The first pipe 10071 secures a spatialreference potential V0 with reference to the high voltage. The firstpipe is surrounded by the second pipe and is thus set to GND. Thisconfiguration achieves GND connection in the apparatus installation andprevents electric shock. The pipe 10071 is fixed to the pipe 10072 byinsulative components. The pipe 10072 is set to GND, and attached to themain housing 30. The primary optical system 2000, the secondary opticalsystem, the detection system 76 and the like are arranged in the firstpipe 10071.

An internal partition wall between the first pipe 10071 and the secondpipe 10072, even including components screws and the like, are made ofnonmagnetic material not to affect the magnetic field, therebypreventing the magnetic field from affecting the electron beam. Althoughnot shown in FIG. 19, a space is provided at the side of the second pipe10072. In the space, a protrusion is connected in which parts of theprimary optical system 2000, such as the light source and thephotoelectron generator, are arranged. A space similar to the spaceprovided for the second pipe 10072 is also provided for the first pipe10071. Photoelectrons occurring from the photoelectron generationportion pass through the spaces, and the sample is irradiated with thephotoelectrons. The light source is not necessarily provided in thesecond pipe 10072. Instead, the light source may be provided on theatmosphere side, and light may be introduced into the photoelectrongeneration portion stored in the second pipe 10072 on the vacuum side.However, the primary optical system and the secondary optical system arenecessarily stored in the double pipe structure. The detector may bedisposed in the first pipe 10071, or at the position with a potentialindependent from the first and second pipes. Here, the potential of thedetection surface of the detector is set to any value to control theenergy of electrons incident on the detector to have an appropriatevalue. In a state of potential separation by the insulative componentfrom the pipe 1 and the pipe 2, any voltage is applied to the detectorto achieve a detection sensor surface potential, thereby allowingoperation. Here, provided that the sensor surface potential is VD, theenergy incident on the sensor surface is defined by VD-RTD. In the casewhere EB-CCD or EB-TDI is adopted as the detector, it is effective toset the incident energy to 1 to 7 keV for the sake of reducing damage tothe sensor and use for a long period of time.

Furthermore, another configuration of the semiconductor inspectionapparatus 1 including the electronic optical device 70 according to theinvention of this application will be described. FIG. 20 is a diagramshowing the entire configuration of the semiconductor inspectionapparatus 1 according to one embodiment of the invention of thisapplication. As shown in FIG. 20, the semiconductor inspection apparatus1 according to the one embodiment of the invention of this applicationincludes a second vacuum chamber 900. That is, the second vacuum chamber900 is arranged in the semiconductor inspection apparatus 1. The powersupply 910 causing a high voltage is arranged in the second vacuumchamber 900. The lens tube 71, which stores the first pipe and thesecond pipe, and the second vacuum chamber 900 are caused to communicatewith each other by the communication pipe 920. Wiring is arranged in thecommunication pipe 920. This arrangement is adopted because theelectronic optical device 70 according to the invention of thisapplication has a reference potential V0 at a high voltage as describedabove, which is different from the conventional configuration. In orderto set the reference potential V0 to the high voltage, the semiconductorinspection apparatus 1 including the electronic optical device 70according to the invention of this application includes pipes having adouble pipe structure. The high voltage is applied to the internal firstpipe 10071. Application of such a high voltage requires a largefeedthrough between the atmosphere and the vacuum in order to secure acreeping dielectric strength voltage because the dielectric strengthvoltage on the atmosphere side is low. For instance, provided that thedielectric strength voltage is 1 kV/mm, an insulative component havingat least an insulation creeping distance of 40 mm at 40 kV and largeconnectors supporting the specification are required. If a number ofsuch connectors are adopted, a space used for an installation sectionfor the connectors in the lens tube accounts for a large ratio, and thesize of the lens tube and the cost are increased. Thus, in the presentinvention, a vacuum chamber dedicated to the power supply is provided.This configuration negates the need of the feedthrough from the output.Accordingly, it is sufficient that the wiring is connected to theelectrode. Here, generated gas from the power supply is a factor ofcontamination. Accordingly, it is effective to establish vacuuminsulation between the vacuum chamber for the power supply and the lenstube using an insulative component, in order to block vacuumcommunication at the middle of the wiring. In the case of high voltage,the wires should be thick. In the semiconductor inspection apparatus 1,the higher the voltage applied to the sample, the more a number of thickwires are required to be arranged around the stage. In the case ofarranging the wires having a large diameter in the working chamber, alarge torque is required because stage movement is accompanied bymovement of the wires. There is a problem in that, for instance, thefrictional force between the wires and the surface of walls is large,and particles are formed. Accordingly, the configuration where thesample potential is set to GND, and the reference voltage is set to thehigh voltage is significantly effective. Here, it is further effectivethat the voltage of the surface of the detector is controlled to reducedamage to the sensor. The sample potential, the reference stagepotential and the sensor surface potential are set to different values.Here, for instance, it is significantly effective to set the samplepotential to GND, set the reference voltage to 10 to 50 kV, and sets thesensor surface potential to 3 to 7 kV. As described above, the secondvacuum chamber 900 is arranged to store the power supply 910 andcommunicates with the lens tube and the like through the communicationpipe 920, and the wiring is arranged in the communication pipe 920, thusachieving vacuum wiring. An external power supply (AC 100 V, DC 24 V orthe like) is introduced to the power supply, and an opticalcommunication system is adopted. A small feedthrough is sufficient foran extent to such an external power supply. Accordingly, connection fromthe atmosphere side is easy.

As described above, the configuration has the double pipe structure.Accordingly, a state can be achieved where the inner pipe (pipe 1) is ina high vacuum, and a space between the external pipe (pipe 2) and theinner pipe (pipe 1) is at an atmospheric pressure. In such a case,arrangement of the electrostatic electrode in the pipe 1 is sometimesunrealistic because the number of connections on the wall of the wiringpipe 1 is large, and the feedthrough between the vacuum and atmosphereis large. Here, the lens, the aligner and the corrector using themagnetic field are adopted. This configuration negates the need ofarranging the feedthrough in the pipe 1, and is effective for the caseof forming a reference space at the high voltage. This structure isapplicable to the modes of Embodiments 1 to 9.

The double structure is applied to each of the lens tube, the secondvacuum chamber for power supply, and the communication pipe which is forvacuum wiring and through which the lens tube and the second vacuumchamber communicate with each other, thereby providing theaforementioned semiconductor inspection apparatus 1 including theprimary optical system 2000 according to the invention of thisapplication. However, this is only an example. The semiconductorinspection apparatus 1 including the primary optical system 2000according to the invention of this application is not limited thereto.The aforementioned embodiments, for instance, the embodiments of theprimary system and the secondary system as described in Embodiments 1 to9 can be embodied adopting the double pipe structure of this embodiment.

Embodiment 4

Beam Measurement Method at Crossover Position, Method of AdjustingPrimary Irradiation Electron Beam and NA Position Using the MeasuringMethod, and Semiconductor Inspection Apparatus Using the AdjustmentMethod

A semiconductor inspection method will be described that includes anelectronic optical device provided with the primary optical systemaccording to the invention of this application. The following method isalso applicable to a semiconductor inspection apparatus that includeselectronic optical device including a typical electron gun.

In this embodiment, a mapping projection observation apparatus (electronbeam observation apparatus including a mapping projection opticalsystem) is used to observe a sample. Such an electron beam observationapparatus includes a primary optical system and a secondary opticalsystem. The primary optical system 2000 irradiates the sample withelectron beam emitted from a photoelectron generation portion togenerate electrons including information on the structure and the likeof the sample. The secondary optical system includes a detector, andforms an image of electrons generated by irradiation with the electronbeam. The mapping projection observation apparatus uses an electron beamwith a large diameter to acquire an image in a wide range. That is,irradiation is performed using a planar beam instead of a spot beamnarrowed as in the case of a typical SEM.

When the sample is irradiated with the electron beam, multiple type ofelectrons are detected by the secondary optical system. The multipletypes of electrons are mirror electrons, secondary electrons, reflectedelectrons, and backscattering electrons. In this embodiment, thesecondary electrons, reflected electrons and the backscatteringelectrons are referred to as secondarily released electrons. The sampleis then observed using the characteristics of the mirror electrons andthe secondarily released electrons. The mirror electrons recoilimmediately before the sample without colliding with the sample. Amirror electron phenomenon is caused by an action of an electric fieldof the surface of the sample.

As described above, the secondary electrons, the reflected electrons andthe backscattering electrons are referred to as the secondarily releasedelectrons. Also in the case where the three types of electrons aremixed, the term of secondarily released electrons is used. Among thesecondarily released electrons, the secondary electrons are typical.Thus, the secondary electrons are sometimes described as arepresentative type of the secondarily released electrons. On both themirror electrons and the secondarily released electrons, expressions,such as “released from the sample”, “reflected by the sample” and“generated by irradiation with the electron beam” may be used.

FIG. 21 is a diagram showing the relationship between the landing energyLE and the gradation DN in the case of irradiating the sample withelectron beams. The landing energy LE is an energy applied to theelectron beam with which the sample is irradiated. It is provided thatthe acceleration voltage Vacc is applied to the electron gun, and aretarding voltage Vrtd is applied to the sample. In this case, thelanding energy LE is represented by the difference between theacceleration voltage and the retarding voltage.

In FIG. 21, the gradation DN in the ordinate represents the luminance ofan image generated from electrons detected by the detector of thesecondary optical system. That is, the gradation DN represents thenumber of detected electrons. The gradation DN increases with the numberof detected electrons.

FIG. 21 shows gradation characteristics in a small energy region around0 [eV]. As shown in the diagram, in a region where the LE is higher thanthe LEB (LEB<LE), the gradation DN is a constant value that isrelatively small. In a region where the LE is equal to or less than theLEB but at least the LEA (LEA≦LE≦LEB), the gradation the DN increaseswith decrease in the LE. In a region where the LE is smaller than theLEA (LE<LEA), the gradation DN is a constant value that is relativelylarge.

The gradation characteristics relate to the types of detected electrons.In the region where LEB<LE, almost all the detected electrons are thesecondarily released electrons. The region can be regarded as asecondarily released electron region. Meanwhile, in the region whereLE<LEA, almost all the detected electrons are the mirror electrons. Thisregion can be regarded as a mirror electron region. As shown in thediagram, the gradation of the mirror electron region is larger than thegradation of the secondarily released electron region. This feature isbecause the mirror electron distribution range is smaller than the rangeof the secondarily released electrons. Since the distribution range issmall, electrons as many as possible reach the detector, and thegradation increases.

The region where LEA≦LE≦LEB is a transition region from the secondarilyreleased electron region to the mirror electron region (or reversedrelationship). The region may be a region where the mirror electron andthe secondarily released electrons are mixed, and may be regarded as amixed region. In the transition region (mixed region), as the LEdecreases, the amount of generated mirror electron increases and thegradation increases.

LEA and LEB denote the minimum landing energy and maximum landing energyof the transition region, respectively. Specific values of the LEA andLEB are described. Research results of the inventors show that LEA is atleast −5 [eV] and LEB is 5 [eV] or less (i.e., −5 [eV]≦LEA LEB≦5 [eV]).

Advantages of the transition region are as follows. In the mirrorelectron region (LE<LEA), all electrons generated by beam irradiationare mirror electron. Accordingly, all detected electrons are mirrorelectrons irrespective of the shape of the sample, the difference ingradation at both the pits and bumps of the sample is small, and the S/Nratio and contrast of patterns and defects are small. Accordingly, it issometimes difficult to use the mirror electron region for inspection. Incontrast, in the transition region, mirror electrons arecharacteristically and specifically generated at edges of the shape, andsecondarily released electrons are generated at the other portions. TheS/N ratio and contrast of the edges can thus be increased. Thetransition region is therefore significantly effective for inspection.This point will be described in detail below.

FIG. 22 shows the phenomenon in the transition region. FIG. 22 is adiagram showing the phenomenon in the transition region. In FIG. 22, inthe mirror electron region (LE<LEA), all electrons become mirrorelectrons without colliding with the sample. In contrast, in thetransition region, a part of electrons collides with the sample, and thesample emits secondarily released electrons. The higher the LE is, thehigher the ratio of the secondarily released electrons is. Although notshown, if the LE exceeds the LEB, only secondarily released electronsare detected.

In the present invention, a method of condition creation and adjustmentof the electron beam of the irradiation electron beam and the secondaryoptical system for forming an image, including the secondarily releasedelectron region, the transition region, the mirror electron region, andincluding patterns with asperity structures, and patterns withoutasperities. The present invention can greatly effectively achieve highlyaccurate adjustment and condition creation. This point will be describedbelow.

The present invention is significantly characterized by measuring theposition and shape of the beam reaching a crossover position(hereinafter, referred to as a CO position) at a midpoint in thesecondary optical system. Conventionally, the NA is moved withoutmeasurement of the beam reaching the CO position, and the contrast ofthe image is evaluated. This technique takes too much time. Theconventional procedures are as follows.

a. Form image forming conditions by a lens between the CO position andthe detector.

b. Use a large diameter in the case of presence of an NA. Instead,remove the NA. It is preferred that the entire CO can be observed. Forinstance, φ1000 to φ5000 μm.

c. Take an image of the beam at the CO position.

In the present invention, in order to efficiently take an image andperform adjustment as described above, and to prevent deterioration dueto contamination, improve exchangeability and facilitate maintenance, amovable numerical aperture (NA) 10008 is characteristically provided;the configuration of the apparatus will be described. FIG. 23 shows aninspection example of a beam shape at the CO position at the LE. FIG. 23is a diagram showing the inspection example of the beam shape at the COposition at the LE. FIG. 23 shows: the shape of the beam reaching the COposition in the upper half of the diagram; and phenomena in the mirrorregion of the beam with which the surface of the sample is irradiated,the transition region and the secondarily released electron region inthe lower half. In the upper half, the mirror electrons are indicated bysolid dots, and the secondarily released electrons are indicated by anopen circle. At the LE, in the mirror electron region, only the mirrorelectrons are observed. In the transition region, the mirror electronand the secondarily released electrons are observed. In the secondarilyreleased electron region, only the secondarily released electrons areobserved, but no mirror electron is observed. Through use of image dataacquired by the imaging, the position, size and intensity of the mirrorelectrons, and the size and intensity of the secondarily releasedelectrons are observed.

When the sample as a target is irradiated with the irradiation electronbeam, it can be immediately determined which one is the state concernedamong the three states on the basis of the observation. Conventionally,ambiguous prediction has been made on the basis of irradiationconditions and an acquired image. Accordingly, accurate determination onsituations as described above cannot be made. Furthermore, errors due topower supply setting accuracy and adverse effects due to optical axisconditions cannot be correctly determined either. These problems occurbecause formation of the mirror electron region and the transitionregion is sensitive to the LE and the optical axis conditions andadverse effects are also caused owing to errors of control devices andthe conditions. For instance, the setting accuracy of the power supplyis typically about 0.1%. The setting error of the 5000 V-setting powersupply reaches 5 V. A variation of 5 V is sufficient for a change fromthe transition region to the mirror region, and a change from thetransition region to the secondarily released electron region. Since theverification cannot have been made, only ambiguous predictions have beenallowed; e.g., the predictions include that the region might be themirror electron region and that the region might be the transitionregion, based on the setting values.

Furthermore, according to the present invention, a method will bedescribed that sets the NA position where the primary irradiationelectron beam is adjusted and an image is formed, using the measurementmethod. It is provided that the direction of the sample, such as a maskand a wafer, has already been positionally adjusted with respect to thecoordinates of the secondary optical system (column).

Photoelectron Cathode Primary System FIG. 14 shows an example where thereference voltage is not GND but is a high voltage. In this example, thereference voltage is +40000 V. A cylindrical pipe is adopted in order tointegrate the reference voltage and form an electric field in thecolumn. The pipe is represented as a pipe 1. A voltage of 40000 V isapplied to form the reference voltage. A part adjacent to thephotoelectronic surface is parallel to the equipotential line(distribution) photoelectric surface. A magnetic field lens is adoptedas the lens. An electromagnetic aligner is adopted as the aligner. TheNA and the other apertures are set to the reference potential, andprovided in the pipe structure. A high voltage is applied to the pipe 1.Accordingly, another pipe 2 is provided outside of the pipe 1. The pipe2 is set to GND. This setting allows the apparatus to establish GNDconnection. The pipe 1 and the pipe 2 are insulated from each other by avoltage-resistant insulator. Necessary application voltage ismaintained. Although not described here, the reference voltage of theprimary system is controlled in order to set the reference voltage ofthe secondary optical system to the high voltage. Accordingly, as withthe primary optical system, the secondary optical system adopts a columnwith a double structure of pipes. The high voltage is applied to theinner pipe, and the outer pipe is set to GND. The voltage difference iskept as with the primary system. The pipe 1 may be conductive and coatedwith resin material, such as polyimide and epoxy, on the outer peripheryof the pipe 1. The outer periphery of the resin material may be furthercoated with conductive material, and the conductive material may be GND.Accordingly, the inside of the resin material is set to the referencevoltage, which is the high voltage, the outside is set to GND, andcomponents with another GND connection and GND installation can beachieved. Furthermore, a pipe 2 that is a shield pipe may be externallyprovided. The pipe 2 is made of magnetic material, such as permalloy orpure iron, and can shield an external magnetic field. This embodiment isalso applicable to the aforementioned Embodiments 1 to 25 andembodiments without reference numerals.

Second Detector

As means that does not require frequent replacement of detectors andmeasures the position, the shape of the beam at the CO position andadjusts the optical axis, and as a detector for measuring the beam atthe CO position, a second detector is provided immediately before adetector for inspection. FIGS. 24A and 24B are diagrams showing theprinciple of the second detector according to the invention of thisapplication. FIG. 24A is a diagram showing the secondary optical systemof the invention of this application. FIG. 24B is a diagram showing astate where an electron beam of secondarily released electrons andmirror electrons at a numerical aperture (NA) 10008 position isimage-formed at a second detector 76-2 through a lens. Between thenumerical aperture 10008 and the detection system 76 shown in FIG. 24B,the second detector 76-2 according to one embodiment of the invention ofthis application is provided to allow the movable numerical aperture(NA) 10008 to move and take an image of the position and the shape ofthe beam at the CO position at the second detector. Any shape at the COposition (or NA position) and position that allow a still image to betaken may be adopted. Adjustment is repeated on the basis of informationon the taken image by the second detector 76-2, and inspection isperformed after the adjustment.

The secondarily released electrons and the mirror electrons havingpassed through the numerical aperture (NA) 10008 are image-formed on thesensor surface of the detector. The thus formed two-dimensionalelectronic image is acquired by the second detector 76-2, converted intoan electric signal, and transmitted to an image processing unit. Inorder to allow the second detector 76-2 to take an electron beam imageat the CO position, a transfer lens or an electrostatic lens forenlarged projection may be adopted between the numerical aperture 10008and the second detector 76-2.

An EB-CCD or a C-MOS type EB-CCD may be adopted as the second detector76-2. The element has a size of ½ to ⅓ of element size of the EB-TDI,which is the first detector (detector 761). This configuration can takean image with a pixel size smaller than the size of the first detector.The pixel size is a value acquired by dividing the element size by theoptical magnification, and is an image division size on the surface ofthe sample. For instance, with an element size of 10 μm□ and amagnification of 1000, pixel size=10 μm/1000=10 nm. Any second detectorhaving a smaller element size than the first detector has allows surfaceobservation with a smaller pixel size than the size of the firstdetector. The EB-TDI of the first detector, and the EB-CCD or the C-MOStype EB-CCD of the second detector do not require a photoelectronconversion mechanism and an optical transmission mechanism. Electronsare immediately incident on the EB-TDI sensor surface or the EB-CCDsensor surface. Accordingly, the resolution is not degraded, and a highMTF (modulation transfer function) and contrast can be achieved. Incomparison with the conventional EB-CCD, the C-MOS type EB-CCD cansignificantly reduce the background noise. Accordingly, the reduction issignificantly effective for reducing noise due to the detector. In thecase of imaging in the same conditions, the contrast can be improved andthe S/N ratio can be improved in comparison with the conventional art.In particular, this configuration is effective for the case where thenumber of acquired electrons is small. In terms of noise reduction, thisconfiguration can exert advantageous effects ⅓ to 1/20 as high as theeffects of the conventional EB-CCD.

The beam passing through the numerical aperture (NA) 10008 and formingan image at the detector surface is detected by the second detector76-2. On the basis of the position and the shape of the detected beam,condition creation of the electron beam and the position of thenumerical aperture (NA) 10008 are adjusted. After various adjustmentsare performed on the basis of the detection results by the seconddetector 76-2, the sample is inspected using the detection system 76.Accordingly, since the detection system 76 is used only duringinspection, the frequency of replacement of the detection system 76 canbe suppressed. Since the second detector 76-2 takes only still images,degradation, if any, does not affect inspection. In order to achievesuch image forming conditions, for instance, in the conditions forforming an electronic image at the first detector, and the conditionsfor forming an image at the second detector, and the conditions forforming an image at the second detector where the image is of the beamshape at the CO position for observing the beam at the CO position,these adjustments includes the cases where the lens intensity of thetransfer lens 10009 is adjusted, and the optimal conditions for thefirst detector and the second detector are acquired, and the imageforming conditions are used, with reference to FIG. 10A. The lens 741may be adopted instead of the transfer lens 10009. The distance betweenthe lens center and the detector is changed, and the magnification ischanged accordingly between the case of using the transfer lens 10009and the case of using the lens 741. Thus, a preferable lens andmagnification may be selected.

The aforementioned second detector 76-2 can exert advantageous effectsin the case of using the adjusting method according to the invention ofthis application that measures the position and shape of the beam at theCO position, creates the conditions for the electron beam and performshighly accurate adjustment. The second detector 76-2 can be applied notonly to the electronic optical device including the new photoelectrongeneration portion according to the invention of this application butalso to an electronic optical device including a typical electron gun.This embodiment is also applicable to the apparatuses described inEmbodiments 1 to 3. In the example of the method of adjusting the beamand the NA position, the case where the primary beam is the electronbeam has been described. However, the configuration is also applicableto the case where the irradiation system is the system with light orlaser. The configuration is applicable to the case where laser or lightis emitted, photoelectrons occur from the surface of the sample, and thesize of the crossover of the photoelectrons and the relationship betweenthe center position of the cross over and the NA setting position areappropriately defined. Accordingly, a photoelectron image with a highresolution can be formed.

Electronic Inspection Apparatus

FIG. 25 is a diagram showing a configuration of an electron beaminspection apparatus to which the present invention is applied. Theabove description has been made mainly on the principle of the foreignmatter inspection method. The foreign matter inspection apparatusapplied to performing the foreign matter inspection method will hereinbe described. Accordingly all of the aforementioned foreign matterinspection methods are applicable to the following foreign matterinspection apparatus.

An inspection object of the electron beam inspection apparatus is asample 20. The sample 20 is any of a silicon wafer, a glass mask, asemiconductor substrate, a semiconductor pattern substrate, and asubstrate having a metal film. The electron beam inspection apparatusaccording to this embodiment detects presence of a foreign matter 10 onthe surface of the sample 20 that is any one of these substrates. Theforeign matter 10 is insulative material, conductive material,semiconductor material, or a composite thereof. The types of the foreignmatter 10 include particles, cleaning residues (organic matters),reaction products on the surface and the like. The electron beaminspection apparatus may be an SEM type apparatus or a mappingprojection apparatus. In this example, the present invention is appliedto the mapping projection inspection apparatus.

The mapping projection type electron beam inspection apparatus includes:a primary optical system 40 that generates an electron beam; a sample20; a stage 30 on which the sample is mounted; a secondary opticalsystem 60 that forms an enlarged image of secondarily released electronsor mirror electrons from the sample; a detector 70 that detects theelectrons; an image processor 90 (image processing system) thatprocesses a signal from the detector 70; an optical microscope 110 foralignment; and an SEM 120 for review. In the present invention, thedetector 70 may be included in the secondary optical system 60. Theimage processor 90 may be included in the image processor of the presentinvention.

The primary optical system 40 generates an electron beam, and irradiatesthe sample 20. The primary optical system 40 includes an electron gun41; lenses 42 and 45; apertures 43 and 44; an E×B filter 46; lenses 47,49 and 50; and an aperture 48. The electron gun 41 generates an electronbeam. The lenses 42 and 45 and apertures 43 and 44 shape the electronbeam and control the direction of the electron beam. In the E×B filter46, the electron beam is subjected to a Lorentz force due to a magneticfield an electric field. The electron beam enters the E×B filter 46 inan inclined direction, is deflected into a vertically downwarddirection, and travels toward the sample 20. The lenses 47, 49 and 50control the direction of the electron beam and appropriately decelerate,thereby controlling the landing energy LE.

The primary optical system 40 irradiates the sample 20 with the electronbeam. As described above, the primary optical system 40 performsirradiation with both an electron beam for precharging and an imagingelectron beam. In experiment results, the difference between aprecharging landing energy LE1 and a landing energy LE2 for an imagingelectron beam is preferably 5 to 20 [eV].

In terms of this point, it is provided that in the case with a potentialdifference between the potential of the foreign matter 10 and thepotential therearound, the precharging landing energy LE1 is emitted ina negative charging region. In conformity with the value of LE1, thecharging up voltage varies. This variation is because of variation in arelative ratio of the LE1 and the LE2 (LE2 is a landing energy of theimaging electron beam as described above). If the LE1 is high, thecharging up voltage is high. Accordingly, a reflection point is formedat an upper position of the foreign matter 10 (position close to thedetector 70). The trajectory and transmittance of the mirror electronsvary according to the reflection point. Thus, the optimal charging-upvoltage conditions are determined according to the reflection point. Ifthe LE1 is too low, an efficiency of forming the mirror electronsreduces. The present invention has found that the difference between theLE1 and the LE2 is preferably 5 to 20 [eV]. The value of the LE1 ispreferably 0 to 40 [eV], and further preferably 5 to 20 [eV].

In the primary optical system 40 of the mapping projection opticalsystem, the E×B filter 46 is particularly important. The primaryelectron beam angle can be defined by adjusting the conditions of theelectric field and the magnetic field of the E×B filter 46. Forinstance, the irradiation electron beam of the primary system and theelectron beam of the secondary system can set the conditions of E×Bfilter 46 so as to make the incidence substantially rectangular to thesample 20. In order to further increase the sensitivity, for instance,it is effective to incline the incident angle of the electron beam ofthe primary system with respect to the sample 20. An appropriateinclined angle is 0.05 to 10 degrees, preferably is about 0.1 to 3degrees.

Thus, the signal from the foreign matter 10 is strengthened by emittingthe electron beam at an inclination of a prescribed angle θ with respectto the foreign matter 10. Accordingly, conditions where the trajectoryof the mirror electron does not deviate from the center of the secondaryoptical axis can be formed. Thus, the transmittance of the mirrorelectron can be increased. Accordingly, in the case where the foreignmatter 10 is charged up and the mirror electrons are guided, theinclined electron beam is significantly efficiently used.

Referring again to FIG. 25, the stage 30 is means for mounting thesample 20, and movable in the horizontal x-y directions and the θdirection. The stage 30 may be also movable in the z direction asnecessary. Means for fixing a sample, such as an electrostatic chuck,may be provided on the surface of the stage 30.

The sample 20 is on the stage 30. The foreign matter 10 is on the sample20. The primary optical system 40 irradiates the surface 21 of thesample with the electron beam at a landing energy LE of 5 to −10 [eV].The foreign matter 10 is charged up, incident electrons in the primaryoptical system 40 recoil without coming into contact with the foreignmatter 10. Accordingly, the mirror electrons are guided by the secondaryoptical system 60 to the detector 70. Here, the secondarily releasedelectrons are released from the surface 21 of the sample in spreaddirections. Accordingly, the transmittance of the secondarily releasedelectrons is a low value, for instance, about 0.5 to 4.0%. In contrast,the direction of the mirror electron is not scattered. Accordingly, atransmittance of the mirror electrons of about 100% can be achieved. Themirror electrons are formed on the foreign matter 10. Thus, only thesignal of the foreign matter 10 can achieve a high luminance (the statewith the large amount of electrons). The difference of the luminancefrom the ambient secondarily released electrons and the ratio of theluminance increase, thereby allowing high contrast to be achieved.

As described above, the image of the mirror electron is enlarged at amagnification higher than the optical magnification. The magnificationratio reaches 5 to 50. In typical conditions, the magnification ratio isoften 20 to 30. Here, even if the pixel size is three times as large asthe size of the foreign matter, the foreign matter can be found.Accordingly, high speed and high throughput can be achieved.

For instance, in the case where the size of the foreign matter 10 has adiameter of 20 [nm], it is sufficient that the pixel size is 60[nm],100[nm], 500[nm] or the like. As with this example, the foreign mattercan be imaged and inspected using the pixel size three times as large asthe size of the foreign matter. This feature is significantly excellentfor high throughput in comparison with the SEM system and the like.

The secondary optical system 60 is means for guiding electrons reflectedby the sample 20 to the detector 70. The secondary optical system 60includes lenses 61 and 63, a NA aperture 62, an aligner 64, and adetector 70. The electrons are reflected by the sample 20, and passagain through the objective lens 50, the lens 49, the aperture 48, thelens 47 and the E×B filter 46. The electrons are then guided to thesecondary optical system 60. In the secondary optical system 60,electrons pass through the lens 61, the NA aperture 62 and the lens 63and are accumulated. The electrons are adjusted by the aligner 64, anddetected by the detector 70.

The NA aperture 62 has a function of defining the secondarytransmittance and aberrations. The size and the position of the NAaperture 62 are selected such that the difference between the signalfrom the foreign matter (mirror electron etc.) and the signal from theambient portions (normal portions) is large. Instead, the size and theposition of the NA aperture 62 are selected such that the ratio of thesignal from the foreign matter 10 with respect to the ambient signal islarge. Thus, the S/N ratio can be high.

For instance, it is provided that the NA aperture 62 can be selected ina range of φ50 to φ3000 [μm]. Detected electrons are mixture of mirrorelectrons and secondarily released electrons. In such situations, theaperture size is effectively selected in order to improve the S/N ratioof the mirror electron image. In this case, it is preferred to selectthe size of the NA aperture 62 such that the transmittance of the mirrorelectrons is maintained by reducing the transmittance of the secondarilyreleased electrons.

For instance, in the case where the incident angle of the primaryelectron beam is 3°, the reflection angle of the mirror electrons isabout 3°. In this case, it is preferred to select the size of the NAaperture 62 that allows the trajectory of the mirror electrons to pass.For instance, the appropriate size is φ250 [μm]. Because of thelimitation to the NA aperture (diameter φ250 [μm]), the transmittance ofthe secondarily released electrons is reduced. Accordingly, the S/Nratio of the mirror electron image can be improved. For instance, in thecase where the aperture diameter is from φ2000 to φ250 [μm], thebackground gradation (noise level) can be reduced to ½ or less.

Referring again to FIG. 25, the detector 70 is means for detectingelectrons guided by the secondary optical system 60. The detector 70 hasa plurality of pixels on the surface. Various two-dimensional sensor maybe adopted as the detector 70. For instance, the detector 70 may be anyof a CCD (charge coupled device) and a TDI (time delay integration)-CCD.These are sensors that convert electrons into light and then detectsignals. Accordingly, photoelectronic conversion means is required.Thus, electrons are converted into light using photoelectronicconversion or a scintillator. Optical image information is transmittedto the TDI that detects light. The electrons are thus detected.

Here, an example where the EB-TDI is applied to the detector 70 will bedescribed. The EB-TDI does not require a photoelectronic conversionmechanism and an optical transmission mechanism. The electrons aredirectly incident on the EB-TDI sensor surface. Accordingly, the highMTF (modulation transfer function) and contrast can be acquired withoutdegradation in resolution. Conventionally, detection of small foreignmatters 10 has been unstable. In contrast, use of the EB-TDI can improvethe S/N ratio of a weak signal of the small foreign matters 10.Accordingly, a higher sensitivity can be achieved. The S/N ratioimproves by a factor of 1.2 to 2.

In addition to the EB-TDI, an EB-CCD may be provided. The EB-TDI and theEB-CCD can be replaced with each other, and can be arbitrarily switched.Such a configuration may also be effective. For instance, a method ofuse as shown in FIG. 26 is applied.

FIG. 26 shows the detector 70 that can switches an EB-TDI 72 and theEB-CCD 71 from each other. The two sensors can be replaced with eachother according to usage. Both the sensors can be used.

In FIG. 26, the detector 70 includes the EB-CCD 71 and the EB-TDI 72provided in the vacuum container 75. The EB-CCD 71 and the EB-TDI 72 areelectronic sensors that receive an electron beam. The electron beam e isdirectly incident on the detection surface. In this configuration, theEB-CCD 71 is used to adjust the optical axis of the electron beam, andto adjust and optimize image taking conditions. Instead, in the case ofusing the EB-TDI 72, the EB-CCD 71 is moved to a position apart from theoptical axis by a movement mechanism M. The EB-TDI 72 then takes animage through use or in consideration of the conditions acquired usingthe EB-CCD 71. Evaluation or measurement is performed using the image.The movement mechanism M may be configured to allow movement not only inthe direction (X direction) where the EB-CCD 71 moves but also along thethree axes (e.g., X, Y and Z directions), and allow the center of theEB-CCD 71 to be finely adjusted with respect to the center of theoptical axis of the electronic optical system.

In the detector 70, the EB-TDI 72 can detect the foreign matters on thesemiconductor wafer through use or with reference to the electronicoptical conditions acquired using the EB-CCD 71.

After foreign matter detection by the EB-TDI 72, review imaging may beperformed using the EB-CCD 71. Defects, such as the types and the sizesof foreign matters, may be evaluated. The EB-CCD 71 can integrateimages. The integration can reduce the noise. Accordingly, reviewimaging can be performed on defect detection portions at a high S/Nratio. Furthermore, it is effective that the pixel of the EB-CCD 71 issmaller than the pixel of the EB-TDI 72. That is, the number of pixelsof the image pickup element can be increased in comparison with the sizeof the signal enlarged by the mapping projection optical system.Accordingly, an image having a higher resolution can be acquired. Theimage is used for inspection and classifying and determining the typesof defects.

The EB-TDI 72 has a configuration where the pixels are two-dimensionallyarranged. For instance, the EB-TDI has a rectangular shape. Thus, theEB-TDI 72 can directly receive the electron beam e and form anelectronic image. The pixel size is, for instance, 12 to 16 [μm].Meanwhile, the pixel size of the EB-CCD 71 is, for instance, 6 to 8[μm].

The EB-TDI 72 is formed into a package. The package itself functions asfeedthrough FT. Pins 73 of the package are connected to a camera 74 onthe atmosphere side.

The configuration shown in FIG. 26 can cancel the various drawbacks. Thecanceled drawbacks include optical conversion loss due to FOP, hermeticoptical glass, optical lens and the like, aberrations and distortionduring light transmission, degradation in image resolution thereof, poordetection, high cost, increase in size and the like.

FIG. 27 shows an electron beam inspection apparatus to which the presentinvention is applied. Here, an example of the entire systemconfiguration will be described.

In FIG. 27, the foreign matter inspection apparatus includes: a samplecarrier 190; a mini-environment 180; a load lock 162; a transfer chamber161; a main chamber 160; an electron beam column system 100; and animage processor 90. A conveyance robot in the atmosphere, a samplealignment device, clean air supply mechanism and the like are providedin the mini-environment 180. A conveyance robot in a vacuum is providedin the transfer chamber 161. The robots are arranged in the transferchamber 161 that is always in a vacuum state. Accordingly, occurrence ofparticles and the like due to pressure variation can be suppressed tothe minimum.

The stage 30 that moves in the X and Y directions and the θ (turning)direction is provided in the main chamber 160. An electrostatic chuck isprovided on the stage 30. The sample 20 itself is provided at theelectrostatic chuck. Instead, the sample 20 is held by the electrostaticchuck in a state of being arranged on a pallet or a jig.

The main chamber 160 is controlled by the vacuum control system 150 suchthat the inside of the chamber is kept in a vacuum. The main chamber160, the transfer chamber 161 and the load lock 162 are mounted on avibration isolation base 170. The configuration prevents vibrations fromthe floor from being transmitted.

An electron column 100 is provided on the main chamber 160. The electroncolumn 100 includes: columns of a primary optical system 40 and asecondary optical system 60; and a detector 70 that detects secondarilyreleased electrons, mirror electrons and the like from the sample 20.The signal from the detector 70 is transmitted to the image processor 90and processed. Both on-time signal processing and off-time signalprocessing can be performed. The on-time signal processing is performedduring inspection. In the case of off-time signal processing, only animage is acquired and the signal processing is performed thereafter.Data processed in the image processor 90 is stored in recording media,such as a hard disk and memory. The data can be displayed on a monitorof a console, as required. The displayed data is, for instance, aninspection region, a map of the number of foreign matters, the sizedistribution and map of foreign matters, foreign matter classification,a patch image and the like. System software 140 is provided in order toperform signal processing. An electronic optical system control powersupply 130 is provided in order to supply power to the electron columnsystem. The optical microscope 110 and the SEM inspection apparatus 120may be provided in the main chamber 160.

FIG. 28 shows an example of a configuration in the case where anelectron column 100 and an SEM inspection apparatus 120 of a mappingoptical system inspection apparatus are provided in the same mainchamber 160. The arrangement of the mapping optical system inspectionapparatus and the SEM inspection apparatus 120 in the same chamber 160as shown in FIG. 28 is significantly advantageous. A sample 20 ismounted on the same stage 30. The sample 20 can be observed or inspectedaccording to the mapping system and SEM system. A method of using thisconfiguration and advantageous effects thereof are as follows.

Since the sample 20 is mounted on the same stage 30, the coordinaterelationship is uniquely defined when the sample 20 is moved between themapping system electron column 100 and the SEM inspection apparatus 120.Accordingly, when the detection positions of foreign matters areidentified, two inspection apparatuses can easily highly accuratelyidentify the same position.

In the case where above configuration is not applied, for instance, themapping optical inspection apparatus and the SEM inspection apparatus120 are configured to be separated from each other as differentapparatuses. The sample 20 is moved between the separated apparatuses.In this case, the sample 20 is required to be mounted on the separatestages 30. Accordingly, the two apparatuses are required to separatelyalign the sample 20. In the case of separately aligning the sample 20,specific errors at the same position are unfortunately 5 to 10 [μm]. Inparticular, in the case of the sample 20 with no pattern, the positionalreference cannot be identified. Accordingly, the error furtherincreases.

In contrast, in this embodiment, as shown in FIG. 28, the sample 20 ismounted on the stage 30 in the same chamber 160 in two types ofinspections. Even in the case where the stage 30 is moved between themapping type electron column 100 and the SEM inspection apparatus 120,the same position can be highly accurately identified. Accordingly, evenin the case of the sample 20 with no pattern, the position can be highlyaccurately identified. For instance, the position can be identified atan accuracy of 1 [μm] or less.

Such highly accurate identification is significantly advantageous in thefollowing case. First, foreign matter inspection on the sample 20 withno pattern is performed according to the mapping method. The detectedforeign matter 10 is then identified and observed (reviewed) in detailby the SEM inspection apparatus 120. Since the accurate position can beidentified, not only presence or absence of the foreign matter 10(pseudo-detection in the case of absence) can be determined but also thesize and shape of the foreign matter 10 can be observed in detail athigh speed.

As described above, the separate arrangement of the electron column 100for detecting foreign matters and the SEM inspection apparatus 120 forreviewing takes much time for identifying the foreign matter 10. In thecase of the sample with no pattern, the difficulty is increased. Suchproblems are solved by this embodiment.

As described above, in this embodiment, through use of the imagingconditions for the foreign matter 10 according to the mapping opticalsystem, a significantly fine foreign matter 10 can be highly sensitivelydetected. Furthermore, the mapping optical type electron column 100 andthe SEM inspection apparatus 120 are mounted in the same chamber 160.Thus, in particular, inspection on the significantly fine foreign matter10 with a dimension of 30[nm] or less determination and classificationof the foreign matter 10 can be performed significantly efficiently athigh speed. This embodiment is also applicable to the aforementionedEmbodiments 1 to 3 and embodiments to which no numeral is assigned.

Next, another example using both the mapping projection type inspectionapparatus and the SEM will be described.

The above description has been made where the mapping projection typeinspection apparatus detects the foreign matters and the SEM performsreviewing inspection. However, the present invention is not limitedthereto. The two inspection apparatuses can be applied to anothermethod. Combination of the inspection apparatuses can perform effectiveinspection. For instance, the other method is as follows.

In this inspection method, the mapping projection type inspectionapparatus and the SEM inspect respective regions different from eachother. Furthermore, the “cell to cell (cell to cell)” inspection isapplied to the mapping projection type inspection apparatus, and the“die to die (die to die)” inspection is applied to the SEM. Accordingly,highly accurate inspection is effectively achieved as a whole.

More specifically, the mapping projection type inspection apparatusperforms “cell to cell” inspection in a region with many repetitivepatterns in the die. The SEM performs the “die to die” inspection in aregion with a small number of repetitive patterns. Both inspectionresults are combined and one inspection result is acquired. The “die todie” inspection compares images of two dice that are sequentiallyacquired. The “cell to cell” inspection compares images of two cellsthat are sequentially acquired. The cell is a part of a die.

The inspection method performs high speed inspection using mappingprojection on repetitive pattern portions while performing inspection onregions with a small number of repetitive patterns using the SEM thatcan achieve high accuracy and small number of artifacts. The SEM is notsuitable to high speed inspection. However, since the region with asmall number of repetitive patterns is relatively narrow, the inspectiontime by the SEM is not too long. Accordingly, the entire inspection timecan be suppressed short. Thus, this inspection method can take advantageof the two methods at the maximum, and perform highly accurateinspection in a short inspection time.

Next, referring again to FIG. 27, the mechanism of conveying the sample20 will be described.

The sample 20, such as a wafer or a mask, is conveyed through a loadport into the mini-environment 180, and an alignment operation isperformed in the environment. The sample 20 is conveyed to the load lock162 by the conveyance robot in the atmosphere. The load lock 162 isevacuated from the atmosphere to a vacuum state by the vacuum pump.After the pressure becomes below a prescribed value (about 1 [Pa]), thesample 20 is conveyed by the conveyance robot in the vacuum disposed inthe transfer chamber 161 from the load lock 162 to the main chamber 160.The sample 20 is mounted on the electrostatic chuck mechanism on thestage 30.

Light+EB Irradiation

An embodiment in the case with two types of primary systems will bedescribed.

It is also significantly effective to form an image using combination ofa photoelectron image by irradiation with light or laser and secondarilyreleased electrons and/or mirror electrons (cases with and withoutmirror electrons) by irradiation with an electron beam. Here,secondarily released electrons are in states where a part or mixture ofsecondary electrons, reflected electrons, and backscattering electrons.In particular, in the case of a low LE, it is difficult to discriminatethe states from each other.

An embodiment will be described where the embodiments of irradiating thesample with light or laser in FIGS. 7 to 9 and the embodiments ofirradiating the sample with the electron beam in the primary system inFIGS. 10A to 19 are integrated. FIGS. 29, 30 and 31 show examples of theembodiment. An example where a sample has a asperity shape will bedescribed.

In this example, irradiation with laser (or light) and irradiation withan electron beam are simultaneously performed as the primary beam. Amethod of simultaneous irradiation and a method of temporally alternateirradiation can be adopted. The characteristics of the laser irradiationand the characteristics of electron beam irradiation in this case willbe described, and advantageous effects and working operations in thecase of integration will be described.

In the case where irradiation with laser causes a large amount ofphotoelectrons on the top layer (bumps) to be represented as a whitesignal, and irradiation with an electron beam causes a large amount ofsecondarily released electrons on the top layer to be represented as awhite signal, combination of a photoelectron image and a secondarilyreleased electron image can increase the amount of electrons on the toplayer (white photoelectrons+ secondarily released electrons and/or whitemirror electrons). That is, an image where the top layer (bumps) iswhite and pits are black can be formed, which can improve the contrastand the S/N ratio.

On the contrary, in the case where a large amount of photoelectronsoccur at the pits to be represented as a white signal, and a largeamount of secondarily released electrons occur at pits to be representedas a white signal, simultaneous irradiation with laser and irradiationwith an electron beam (combination) can improve the contrast and the S/Nratio of an image formed such that the pits are white (whitephotoelectrons+ secondarily released electrons and/or white mirrorelectron) and the top layer (bumps) is black. Here, the white signalrepresents that the number of detected electrons is larger than thenumber in the other portions, and the luminance is relatively high,i.e., the state is represented as white and an image can be taken aswhite.

As shown in FIG. 10A, in the case of using the electron beam, anelectron beam separator, such as E×B, is necessary to make separationfrom the secondary beam (the Wien filter or the like is used that allowsthe secondary beam to straightly pass). Accordingly, such an electronbeam separator is also required for the embodiment in which the electronbeam and laser or light are integrated. FIGS. 29, 30, and 31 show theexamples.

The differences between FIGS. 29, 30 and 31 are as follows. The cases inFIGS. 29 and 30 have a mechanism of introducing laser (or light) on thesample side with respect to the E×B. The case in FIG. 31 has a mechanismof introducing laser (or light) on the detector side with respect to theE×B. For instance, in FIGS. 29 and 30, a system where a hole forintroducing laser is provided at a cathode lens, and a sample isirradiated with the laser in a state of being aligned by a mirror andthe like outside of the chamber, and a system where a fiber and a lensare introduced to a cathode lens and irradiation with laser is performedare allowed. In FIG. 31, a mirror element is provided in the secondarycolumn, laser is introduced from the outside of the column, and thesample can be irradiated with the laser (or light). FIG. 31 shows thecase where a large amount of electrons occur at the bumps owing toirradiation with laser and irradiation with the electron beam (whitesignal). Also in the case where a large amount of electrons occurs atthe pits (white signal), analogous operations can be performed as withFIG. 29.

It is more effective to use the electron beam in the primary systemdescribed in the embodiments as shown in FIGS. 12 to 18. Sinceirradiation with an electron beam with a narrow band energy is allowedat a large current, the energies of the formed secondarily releasedelectrons and mirror electrons are in a narrow band. Accordingly, a highresolution image with small aberrations and blurring can be formed. Theenergy of the photoelectrons due to irradiation with laser is in anarrower band than the secondarily released electrons is. Accordingly,even with integration and combination, the energy remains in the narrowband state. Thus, an advantageous effect is exerted where, even thoughthe amount of electrons increases, the energy width does not increase.This effect can be achieved without degrading the image quality in thecase where the laser and the electron beam for irradiation are increasedto improve the throughput. This feature is significantly effective anduseful.

On the contrary, a combination is also allowed where the photoelectronsare represented as white and the secondarily released electrons arerepresented as black. In this case, a combined image is represented asgray, which is an neutral color between white and black. Accordingly,the resolution and the contrast of the pattern are degraded. Here,observation can be made where only defects are represented as a strongwhite signal or a strong black signal. In this case, for instance, ifthe defects are sensitive to light irradiation, a white or black signalcan be formed by increasing or reducing the amount of photoelectrons. Ifthe defects are sensitive to the electronic irradiation, a white orblack signal can be formed by increasing or reducing the amount ofsecondarily released electrons.

Likewise, a combination is allowed where the photoelectrons arerepresented as black and the secondarily released electrons arerepresented as white. In the example of the EUV mask, the followingcombination is allowed for TaBO on the top layer and Ru at the pits.

Combination of Photoelectron Image With White Ru/black TaBO, and Imageof Secondarily Released Electrons and/or Mirror Electrons; Combinationof Black Ru/White TaBO Photoelectron Image and Image of SecondarilyReleased Electrons and/or Mirror Electrons

This combination can achieve high contrast and a high S/N ratio, andhighly sensitively inspect pattern defects and foreign matters.

On a low LE image, the oxide film potential is stabilized by lightirradiation. It is significantly effective in the case where the low LEwith electronic irradiation energy where −5 eV<LE<10 eV, particularly inthe case where the material of the top layer is of an oxide film. In thecase where the top layer is an oxide film, irradiation with the low LEelectron beam charges the oxide film in a negative voltage. The adverseeffect degrades the image quality. Furthermore, the current densitycannot be increased. Here, irradiation with light, such as UV, DUV, EUVand X-rays, or laser can control the potential of the oxide film.Irradiation with such light causes photoelectrons, which allows positivecharging. Accordingly, the low LE and simultaneous or intermittentirradiation with light or laser can control the potential of the oxidefilm to be constant. Since the potential is kept constant, the imagequality is stabilized and stable image formation can be achieved.Accordingly, the throughput can be improved.

Embodiment 5 Uniform and Stable Supply of Sample Surface Potential

Referring to FIGS. 32, 33A and 33B, an example of uniform and stablesupply of a sample surface potential in the inspection apparatus and theinspection method of the present invention will be described. In themapping projection type defect inspection apparatus, a voltage isrequired to be applied to the sample surface. Appearance of the surfacestate and appearance of defects are adjusted by changing the voltageapplied to the sample surface. That is, if the voltage distribution onthe sample surface is uneven, the conditions vary according todifferences of voltage distributions. The variation causes a problem ofaffecting reproducibility and the like.

Thus, an application method is proposed such that the voltagedistribution on the sample surface is uniform. In the present state, oneportion in contact with the mask surface is provided, the output of thehigh voltage power supply is connected to increase the area in contactwith the sample where a high voltage is applied to the surface of thesample. A portion to which a sample application electrode is attached isreferred to as a frame, and is moved vertically to convey the sample tothe inside. In the state where the frame is lowered, the sampleapplication electrode is in contact with the sample surface, and avoltage can be uniformly supplied to the sample (see FIG. 33A).

Furthermore, use of another frame structure is effective for uniform andstable application. FIG. 33B shows the example. In consideration withthe bottom view (FIG. 33B(b)) and the top view (FIG. 33B(c)) of theframe shown in FIG. 33B, the frame structure has a smooth finished topsurface without projections. For instance, the frame is a plate materialwith 195×195 mm□ that is made of titanium or phosphor bronze, and a holeof 146×146 mm is formed at the inner part. As shown in the bottom view,three projections are provided. The projection has a height of about 10to 200 μm. The tip of the projection may be sharp. Through use of theframe (cover), a prescribed value of voltage is applied to the surfacelayer of the mask. In the present invention, the mask is provided on thepallet. The pallet is provided with mask support pins. An exposure mask,such as an EUV mask, is provided on the pins. The mask support pins aremade of material with a little amount of particle occurrence. The pinsare metal members coated with resin, such as polyimide, Teflon(registered trademark) and fluororesin, or members made of resin. Themask arrangement position of the support pins are outside of the portionof 142×142 mm inside of the mask; contact is made at the positions. Atthe inside of the positions are subjected to adverse effect ofinclination of the mask if foreign matters and particles adhere when themask is arranged in the exposure apparatus. The pins prevent foreignmatters and particles from adhering to the region. Instead, the mask canbe fixed in contact with the support pins at the corners of the side andthe bottom of the mask. In this case, the contact part has a surfacestructure inclined at a prescribed angle. In order to prevent theposition of the mask from varying during movement of the stage, maskfixing guide pins for positional fixing may be provided to cause themask to be in contact and fixed.

It is provided that the EUV mask is thus arranged. A typical EUV maskincludes an insulation film on the uppermost surface, and a conductivefilm is arranged beneath the insulation film. Accordingly, in order toapply a stable and uniform voltage to the mask surface, the voltage isrequired to be applied to the conductive film breaking though theuppermost insulation film. At this time, the frame (cover) including theprojections shown in FIG. 33B is effective. A prescribed voltage to beapplied to the mask surface is applied to the frame. As shown in FIG.33A, the frame is provided from above of the mask. At this time, theprojections break through the insulation film and reach the lowerconductive film, and a stable voltage can be applied. Since theprojections serves as portions of application to the mask, theapplication positions can be identified, that is, the voltage can beapplied while the positions are controlled. Furthermore, the contact ismade at the three points. Accordingly, an advantageous effect ofallowing the parallelity between the top surface of the mask and theframe can be achieved. According to arrangement at two points, the frameis inclined. According to arrangement at four points or more, it isdifficult to identify which projection actually breaks the insulationfilm and applies the voltage to the conductive film. Likewise, accordingto the case with no projection, it is difficult to identify at whichportion the mask is in contact. Another different contact state may beestablished every mask replacement. Here, the thickness of theinsulation film in the EUV mask is typically 10 to 20 nm. Accordingly,the frame weight is selected to be suitable to the breaking.

The step between the mask surface and the frame in the case of being incontact with the frame is required to be small. This configuration isrequired because the step causes nonuniformity of the electric fielddistribution. In the case of inspection at an end of the mask, i.e., ata position near the frame, the nonuniformity of the electric fielddistribution may sometime cause the electronic trajectory to deviate,and the coordinates and the center position of the electronic image maydeviate. Thus, the step between the frame and the mask surface isrequired to be minimum. In the present invention, the step is configuredto have a dimension suppressed to 10 to 200 μm. It is preferred that thestep has a dimension of 10 to 100 μm. A scheme may be adopted where aportion and therearound of the frame that is in contact with the maskhas a thin plate thickness. This embodiment is also applicable to theaforementioned Embodiments 1 to 4.

FIGS. 34A and 34B show a diagram showing an incident angle of a primarybeam for a sample in an inspection method according to one embodiment ofthe present invention. As shown in FIGS. 34A and 34B, it is defined thatthe irradiation angle θ of an incident electron beam and irradiationdirection α to the sample (or column coordinates). That is, the anglefrom the direction perpendicular to the sample surface (Z direction; thesame direction as the optical axis direction of the secondary opticalsystem) is defined as θ. For instance, when θ=0, the incident directionis perpendicular to the sample surface. When θ=90 degrees, the incidentdirection is parallel to the sample. When the inclined direction θ=45degrees, the incident direction is 45 degrees from the sample surface. θmay be represented in an absolute value from the Z axis. In both thecases on right and left sides from the Z axis, the same angle isregarded as the same value of θ. Typically, θ ranges from 0 to 45degrees. As to an example of α, on the sample (or column coordinates),the X and Y directions are defined such that the E direction of the E×Bis the Y direction and the B direction is the X direction. For instance,the E+ side of the E×B (the direction where the primary optical systemis) is Y+, and the E− side is Y−. Here, in view of the sample from thedetector side, 90 degrees in the clockwise direction from Y+ is X+, andX− is 90 degrees in the counterclockwise direction from Y+. Forinstance, in the case where the sample is laid in a pattern regionrepresented by a longitudinal line/space (L/S) and a lateral line/space(L/S), arrangement of the longitudinal line in the Y direction and thelateral line in the X direction facilitates understanding. Here, asshown in FIG. 34A, the sample incident angle can be defined as α whilethe X+ direction is 0 degree. When α=0, the incident direction of theprimary electron beam is the X+ direction. An example of the inclineddirection where α=45 degrees is an angle of 45 degrees obliquelyincident in the intermediate direction between the X+ and Y+ directions.That is, a similar irradiation direction of the primary electron beamcan be formed with respect to each of the longitudinal L/S and thelateral L/S. An electronic signal can be formed on the basis of thesimilar line and space, and a similar contrast and S/N ratio can beacquired. After adjustment of the θ and α values, beam observation wherethe NA aperture of the secondary optical system is at a certain COposition results in what is shown in FIG. 35. FIG. 35 is a diagramshowing an example of beam observation at the CO position. This exampleis an adjustment example in the transition region.

The beam of the secondarily released electrons has a circular shape atthe CO position. This state shows electrons released from the surfacedue to collision of the electron beam with the sample. Accordingly, therelease direction from the surface is isotropic. Thus, the circularshape is shown at the CO position. On the contrary, mirror electrons arereflected in proximity to the surface in a direction affected by the θand α. Accordingly, mirror electrons are formed on a position where θand α are reflected, at the CO position.

For instance, in the case of the incident angle α with respect to thesample, the position is formed in the α angle direction at the COposition with respect to the circle of the secondarily releasedelectrons. Provided that the vertical direction on the sample surface isZ and the detector direction is Z+, the incident angle from Z is θ. Themagnitude of the θ affects the mirror electron position at the COposition. That is, if the θ (absolute value) is large as shown in FIG.35, the distance Lm of the secondarily released electrons from the COcenter is large. In other words, in the case of an oblique incidentdirection, a large incident angle θ causes the mirror electron positionto be formed at a position apart from the CO center of the secondarilyreleased electrons. If the primary electron beam is perpendicularlyincident, the mirror electron position is formed at the CO centerposition of the secondarily released electrons.

FIG. 36 shows the example. FIG. 36 is a diagram showing the mirrorelectron position at an incident angle of the primary electron beam. Inthe case of irradiation with the electron beam in the X direction, themirror electron position is formed on the X axis with respect to the COof the secondarily released electrons. In the case of the irradiation ofthe electron beam in the Y direction, the mirror electron position isformed on the Y axis with respect to the CO of the secondarily releasedelectrons. In the case of irradiation in the inclined direction α, themirror electron position is formed in the α direction with respect tothe CO of the secondarily released electrons. Typically used values of αare 0, 30, 45, 60, 90, 120, 150, 180, 210, 240 and 270 degrees. The θ isoften used in a range of 0 to 45 degrees. In the case of the surfacewith asperities capable of acquiring high contrast and a high S/N ratio,θ is often used in a range of 0 to 20 degrees on, for instance, an EUVmask, a nanoimprint mask and a semiconductor wafer.

The incident angle of the primary system can be controlled using thebeam aligner of the primary system. The X direction can be adjusted bythe beam aligner of the primary system, and the Y direction can beadjusted by the E×B. Instead, the Y direction may be aligned by the beamaligner instead of the E×B.

The present invention adjusts the NA position for forming the electronicimage conditions with high contrast and a high S/N ratio. The adjustmentis made because acquired image information is different and the imagequality largely varies according to the relationship between the mirrorelectron position and the NA position. For instance,

a. Image including many mirror electrons: NA is provided adjacent to themirror electron position.

b. Image with white pits/black bumps where the asperity pattern includesmany mirror electrons at the pits.

c. Image with black pits/white bumps where the asperity pattern includesa small number of mirror electrons at the pits.

d. Image with asymmetric contrast, longitudinal/lateral pattern, etc.

e. Image etc. where mirror electrons are formed at the edges of theasperities.

Accordingly, in order to acquire a required image, the relationshipbetween the mirror electron position and the NA position is required tobe acquired and set. Conventionally, because of insufficientunderstanding of an occurring phenomenon and of an adjustment method,the NA is randomly moved and images are acquired to determineconditions. The present invention improves operation efficiency, and cansignificantly reduce time and cost. Here, an NA movable mechanism isrequired in order to adjust and dispose the NA position. Atwo-dimensional movement mechanism is more preferable. In aone-dimensional movement, when the MC (mirror electron position) in theinclined direction or in an immovable axial direction with reference tothe CO center of the secondarily released electrons (e.g., if onlymovable in the X direction, immovable in the Y direction), the NA cannotbe arranged between the MC and the CO center position; thus, to preventthe drawback, two-dimensional movement is preferable.

FIGS. 37 and 38 are diagrams showing examples of the mirror electronpositions and the NA positions. An analogous adjustment method isapplicable not only to a sample with an asperity pattern but also to asample with a flat surface. Even in the case of the flat sample, if animage capturing variation in potential or material is required to beformed on the sample, conditions suitable to capturing variation can beacquired by the present invention and created. For instance, the presentinvention is applicable to detection of fine foreign matters, cleaningresidues, contamination, etc. on the flat sample surface, and detectionof a pattern where the conductive material and insulation material aremixed. Also in the case, as with the above description, theaforementioned condition creation method is applicable in order toacquire conditions with high contrast and a high S/N ratio of thedefects and pattern. The highly sensitive detection, having not beenconventionally achieved, can be achieved. Since such adjustment can bemade, the case where contrast×1.2 to ×2, and S/N ratio×1.5 to ×5 can beacquired is verified in comparison with the conventional methodperformed while viewing an image. This case is significantly effectiveto adjustment time Tc and reproducibility. For instance, Tc=½ to 1/10can be acquired in comparison with the conventional case.

The NA setting positions are roughly classified into the case ofarrangement around the mirror electron position, and the case ofarrangement being apart from the position. The more apart the mirrorelectrons are disposed, the smaller the effects of the mirror electronsbecome.

Inspection of Sample with Mesa Structure

Method 1

In the inspection apparatus of the present invention, for inspection ona sample (inspection object) with a mesa structure, the relationshipsbetween the mirror electron positions and the NA positions on multiplepositions on the edges of the mesa structure (adjacent to the step) arepreliminarily acquired, mapped, and stored as mapping data in a storage(memory etc.). As shown in FIG. 39, in the case of inspecting the edgesof the mesa structure (adjacent to the step 391), the incident angle ofthe beam in the primary system is controlled such that the mapping datais read, and the deviation of the mirror electron position is corrected(the secondary beam is always on the same position). The incident angleof the beam in the primary system is controlled, for instance, bytwo-dimensionally moving the NA using the two-dimensional (orone-dimensional) movement mechanism (or one-dimensional movementmechanism). Thus, even at the ends of the mesa structure (adjacent tothe step 391), an image having high contrast and a high S/N ratio can beacquired. The “mesa structure” is a structure where the central flatportion (central planar portion) 390 is provided at the central portion,and a peripheral flat portion (peripheral planar portion) 392 isprovided via the step 391 at the periphery of the central portion (seeFIG. 39). The inspection apparatus of the present invention is alsoeffective to inspection not only on the sample (inspection object)having the mesa structure but also on the sample (inspection object)with a pattern with asperities.

Method 2

In the inspection apparatus of the present invention, for inspection onthe sample (inspection object) having a mesa structure, as shown in FIG.40, an electric field correction plate 400 may be provided at the outerperiphery (around the step 391) of a central flat portion 390 of themesa structure. For instance, the electric field correction plateincludes: an electrode 401 on the surface; an insulating layer 402provided below the electrode; and an electrode 403 that is for anelectrostatic chuck and is provided below the insulating layer. Thematerial of the electrode 401 is, for instance, Cr, CrN, Ru, Au, Ti,etc. The material of the insulating layer 402 is, for instance,insulation material, such as polyimide, Teflon, and ceramics. Thus, thenonmagnetic conductive material is preferable. The material of theelectrode 403 for the electrostatic chuck is, for instance, Cu, Al andthe like.

A surface voltage (e.g., −5 kV) equivalent to the surface voltageapplied to the conductive film (not shown) on the sample surface isapplied to the electrode 401. Application of the voltage to theelectrode 403 for the electrostatic chuck exerts electrostatic chuckeffects to allow the electric field correction plate (electrode 401) tobe in close contact with the inspection object. Thus, the flatness(uniformity of the electric field) on the electrode surface can besecured, and distortion of the electric field adjacent to the step 391of the mesa structure can be suppressed. Also through use of such anelectric field correction plate 400, an image having high contrast and ahigh S/N ratio can be acquired at the edges (adjacent to the step 391)of the mesa structure.

Furthermore, the “Method 1” and the “Method 2” can be combined, therebyexerting advantageous effects of correcting a highly accurate electronicimage. The trajectory of the electron beam is appropriately corrected bythe electric field corrected by the electric field correction plate.Thus, the distortion of the electronic image is corrected. However,there is a case where correction is not completely made. In this case,combination of the systems according to the “Method 1” is significantlyeffective. The distortion of the image, particularly the distortion atthe ends of the image, causes adverse effects in the case of a TDIimage. Framing out of elements arranged in a column for accumulation inthe TDI sensor causes blurring and the like. Use of the combination cansuppress a distortion of about ⅓- 1/10 with respect to a pixel. A TDIimage where image blurring at the ends are reduced can be acquired. Suchhighly accurate correction is effective particularly in the case ofpattern inspection.

The embodiments of the present invention have been described using theexamples. However, the scope of the present invention is not limitedthereto, and can be changed or deformed according to objects within ascope described in claims.

As described above, the inspection apparatus according to the presentinvention is effective as the semiconductor inspection apparatus thatinspects defects of the pattern formed on the surface of the inspectionobject.

As described above, the inspection apparatus according to the presentinvention is effective as a semiconductor inspection apparatus that canacquire an image having high contrast and a high S/N ratio at the endsof the mesa structure.

1-9. (canceled)
 10. An inspection apparatus comprising a mappingprojection optical system, a scanning electron microscope and an opticalmicroscope, wherein the mapping projection optical system comprises aprimary optical system which irradiates a sample with an electron beamemitted from an electron beam generation portion, and a second opticalsystem which forms an image of electrons generated by irradiation withthe electron beam.
 11. The inspection apparatus according to claim 10,wherein the primary optical system comprises a photoelectron generatorhaving a photoelectronic surface, and a base material of thephotoelectronic surface is made of material with a higher thermalconductivity than a thermal conductivity of quartz.
 12. The inspectionapparatus according to claim 11, wherein the base material of thephotoelectronic surface is made of sapphire or diamond.
 13. Theinspection apparatus according to claim 11, wherein the photoelectronicsurface has a circular shape having a diameter of 10 to 200 μm or arectangular shape having a side of 10 to 200 μm.
 14. The inspectionapparatus according to claim 11, wherein photoelectronic material iscoated on the photoelectronic surface, and the photoelectronic materialis ruthenium or gold.
 15. The inspection apparatus according to claim14, wherein the photoelectronic material has a thickness of 5 to 100 nm.16. The inspection apparatus according to claim 10, wherein a centralportion of the sample is provided with a central flat portion, aperiphery of the central flat portion is provided with a peripheral flatportion via a step, and an electric field correction plate is arrangedaround the step, and a surface voltage equivalent to a surface voltageapplied to the sample is applied to an electrode on a surface of theelectric field correction plate.
 17. The inspection apparatus accordingto claim 16, wherein the electric field correction plate comprises aninsulation layer provided below the electrode, and an electrode that isfor an electrostatic chuck and is provided below the insulating layer,and the electric field correction plate is in close contact with thesample by applying a voltage to the electrode for the electrostaticchuck.
 18. The inspection apparatus according to claim 10, furthercomprising control means for controlling an incident angle of the beamwith which the sample is irradiated, wherein a central portion of thesample is provided with a central flat portion, a periphery of thecentral flat portion is provided with a peripheral flat portion via astep, relationship between a detection position of the secondary chargedparticles in proximity to the step and the incident angle of the beam isstored as mapping data in a storage, and when proximity to the step isinspected, the control means controls the incident angle of the beam soas to correct deviation of the detection position of the secondarycharged particles on the basis of the mapping data.
 19. The inspectionapparatus according to claim 18, wherein the control means is a movablenumerical aperture, and a movement mechanism for the numerical aperture,the mapping data is data that maps a relationship between a plurality ofmirror electron positions in proximity to the step and a position of thenumerical aperture, and when proximity to the step is inspected, thenumerical aperture is moved by the movement mechanism on the basis ofthe mapping data, and the incident angle of the beam is controlled tocorrect a deviation of the mirror electron position.